Characterization and properties of polypyrrole modified ZnIn2S4/TiO2/Ti photoanode in photocatalytic fuel cell

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-05-06 DOI:10.1016/j.mssp.2025.109635

Yunlan Xu, Jiaxin Mou, Lin Dong, Qingmei Qiao, Dengjie Zhong

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引用次数: 0

Abstract

The performance of photocatalytic fuel cell (PFC) depends on photoanode, which is the key to generate photoexcited carriers and degrade organic wastes. In this study, ZnIn₂S₄ nano-bandgap semiconductor and polypyrrole were used to modify TiO₂ to prepare polypyrrole/ZnIn₂S₄/TiO₂/Ti photoanode to increase its photo-response range and the separation of photoexcited carriers. The PFC with polypyrrole/ZnIn₂S₄/TiO₂/Ti photoanode and copper cathode was built to degrade RhB and generate electricity. The RhB removal rate, open-circuit voltage, short-circuit current density, and maximum power density of the photocatalytic fuel cell were 94.6 % (1 h), 0.47 V, 0.23 mA cm⁻² and 21.11 μW cm⁻², respectively. The improvement of PFC performance is attributed to the good visible-light responsive properties of polypyrrole/ZnIn₂S₄.The presence of polypyrrole acts as both an electron donor and a hole acceptor, which provides an ideal pathway for the separation and transmission of photogenerated carriers. The synergistic effect of polypyrrole, ZnIn₂S₄ and TiO₂ eventually increases the photocatalytic ability of the PFC. This research can offer reference for the study of TiO₂-based efficient visible light responsive PFC.

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聚吡咯改性ZnIn2S4/TiO2/Ti光阳极光催化燃料电池的表征与性能

光催化燃料电池（PFC）的性能取决于光阳极，它是产生光激发载流子和降解有机废物的关键。本研究利用ZnIn2S4纳米带隙半导体和聚吡咯对TiO2进行修饰，制备了聚吡咯/ZnIn2S4/TiO2/Ti光阳极，增加了其光响应范围和光激发载流子的分离。构建了聚吡咯/ZnIn2S4/TiO2/Ti光阳极和铜阴极的PFC，用于降解RhB并发电。该光催化燃料电池的RhB去除率为94.6% (1 h)，开路电压为0.47 V，短路电流密度为0.23 mA cm−2，最大功率密度为21.11 μW cm−2。PFC性能的提高主要归功于聚吡咯/ZnIn2S4良好的可见光响应特性。聚吡咯的存在同时充当电子给体和空穴受体，为光生载流子的分离和传输提供了理想的途径。聚吡咯、ZnIn2S4和TiO2的协同作用最终提高了PFC的光催化能力，本研究可为基于TiO2的高效可见光响应PFC的研究提供参考。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.