{"title":"MOF-derived hollow Si with dual Al layers as a high-performance lithium-ion battery film anode","authors":"Jibao Dong, Jing Jin, Weiguang Yang","doi":"10.1016/j.mssp.2025.109644","DOIUrl":null,"url":null,"abstract":"<div><div>Si-based anodes are limited in their widespread application mainly because of their significant volume expansion during cycling. In this study, the hollow Si thin film anode (H-Si-0.1) was prepared using ZIF-8 as a sacrificial template, followed by etching with 0.1 M hydrochloric acid (HCl). The hollow Si was coated with dual Al layers on its inner and outer surfaces, forming the Al/H-Si-0.1/Al composite thin film anode. The hollow structure provides buffering space to accommodate volume change and facilitates the formation of a gyrification-like structure on the film anode during cycling, significantly enhancing cycling stability. Moreover, the hollow structure creates efficient diffusion pathways for lithium ions, improving ion transport. The dual Al layers provide mechanical support for the structural stability of the anode and suppress side reactions. The Al/H-Si-0.1/Al thin film anode provides a high reversible capacity of 2098 mA h g<sup>−1</sup> at 0.5 A g<sup>−1</sup>. It exhibits a specific capacity of 1512 mA h g<sup>−1</sup> at 5 A g<sup>−1</sup> after 300 cycles, achieving a capacity retention of 94.56 %.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"196 ","pages":"Article 109644"},"PeriodicalIF":4.2000,"publicationDate":"2025-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800125003816","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Si-based anodes are limited in their widespread application mainly because of their significant volume expansion during cycling. In this study, the hollow Si thin film anode (H-Si-0.1) was prepared using ZIF-8 as a sacrificial template, followed by etching with 0.1 M hydrochloric acid (HCl). The hollow Si was coated with dual Al layers on its inner and outer surfaces, forming the Al/H-Si-0.1/Al composite thin film anode. The hollow structure provides buffering space to accommodate volume change and facilitates the formation of a gyrification-like structure on the film anode during cycling, significantly enhancing cycling stability. Moreover, the hollow structure creates efficient diffusion pathways for lithium ions, improving ion transport. The dual Al layers provide mechanical support for the structural stability of the anode and suppress side reactions. The Al/H-Si-0.1/Al thin film anode provides a high reversible capacity of 2098 mA h g−1 at 0.5 A g−1. It exhibits a specific capacity of 1512 mA h g−1 at 5 A g−1 after 300 cycles, achieving a capacity retention of 94.56 %.
硅基阳极的广泛应用受到限制,主要是因为它们在循环过程中体积膨胀。本研究以ZIF-8为牺牲模板,用0.1 M盐酸(HCl)蚀刻制备了空心Si薄膜阳极(H-Si-0.1)。在空心Si的内外表面涂覆双Al层,形成Al/H-Si-0.1/Al复合薄膜阳极。中空结构提供缓冲空间以适应体积变化,并有利于循环过程中膜阳极上形成类似回转的结构,显著提高循环稳定性。此外,中空结构为锂离子创造了有效的扩散途径,改善了离子的传输。双铝层为阳极结构的稳定性和抑制副反应提供了机械支撑。Al/ h - si -0.1/Al薄膜阳极在0.5 a g - 1时具有2098 mA h g - 1的高可逆容量。在5ag−1下,经过300次循环后,其比容量为1512 mA h g−1,容量保持率为94.56%。
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications.
Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.