Systematic analysis of the trapping and reliability of Al2O3/GaN MOS capacitors with different atomic layer deposition techniques

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-05-05 DOI:10.1016/j.mssp.2025.109619

Manuel Fregolent , Marco Tomasi , Carlo De Santi , Matteo Buffolo , Liad Tadmor , Enrico Brusaterra , Eldad Bahat Treidel , Andrea Cester , Gaudenzio Meneghesso , Enrico Zanoni , Matteo Meneghini

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引用次数: 0

Abstract

We investigate the robustness and charge trapping phenomena under positive and negative bias stress in Al₂O₃/n-GaN metal-oxide-semiconductor capacitors fabricated with different atomic layer deposition (ALD) techniques: (i) thermal ALD (ThALD), (ii) plasma-enhanced ALD (PEALD), and (iii) stacked-ALD, obtained by alternating the latter two. The results, obtained by means of standard I-V and pulsed-CV measurements, show that PEALD results in the best oxide robustness under positive voltage stress, while ThALD results in the lowest charge trapping. We demonstrate that stacked-ALD layers presents the best trade-off to maximize robustness and minimize charge trapping phenomena, clearing the way for application in GaN MOSFET fabrication. Additionally, we compare the performance of different in-situ plasma pre-treatments on the GaN surface, proving that the NH₃ plasma is effective for improving the device performance in terms of trapped charge and reliability. The results confirm the beneficial role of stacked ALD deposition and surface pre-treatments on the electrical stability and reliability of oxide layers.

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系统分析了不同原子层沉积工艺下Al2O3/GaN MOS电容器的俘获性能和可靠性

我们研究了Al2O3/n-GaN金属氧化物半导体电容器在正负偏置应力下的稳健性和电荷捕获现象，这些电容器采用不同的原子层沉积（ALD）技术：(i)热ALD (ThALD), （ii）等离子体增强ALD (PEALD)，以及（iii）堆叠ALD（后两者交替获得）。通过标准I-V和脉冲cv测量得到的结果表明，PEALD在正电压应力下具有最佳的氧化物稳健性，而ThALD具有最低的电荷俘获性。我们证明了堆叠的ald层提供了最大化鲁棒性和最小化电荷捕获现象的最佳权衡，为GaN MOSFET制造中的应用扫清了道路。此外，我们比较了不同原位等离子体预处理在GaN表面的性能，证明了NH3等离子体在捕获电荷和可靠性方面对提高器件性能是有效的。结果证实了堆积式ALD沉积和表面预处理对氧化层电稳定性和可靠性的有益作用。

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.