High-Efficiency Optoelectronic Modulation in Quasi-2D Perovskite-Based Transistors for Neuromorphic Computing

IF 5.3 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Advanced Electronic Materials Pub Date : 2025-05-05 DOI:10.1002/aelm.202400947

Wenwen Wang, Yao Li, Jiangdong Zhang, Menghan Chen, Jia Liu, Jiahao Kang, Jinjin Zhao

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Abstract

Optoelectronic modulated transistors based on organic–inorganic halide perovskites can perceive and parse visual information, making them appealing for neuromorphic computing or future vision automation owing to their abundant and tunable optoelectronic properties, high quantum efficiency, and large specific surface area. Herein, quasi-2D (ThMA)₂(MA)_n-1Pb_nI_3n+1 (n = 4) transistor exhibits n/p-type ambipolar transport characteristics. The remarkable hysteresis behavior observed in the transfer characteristics can be modulated by external voltages and illumination. The ambipolar quasi-2D (ThMA)₂(MA)_n-1Pb_nI_3n+1 (n = 4) transistor exhibits maximum charge mobility under light illumination with hole mobility (µ_h ) of ≈1.5 × 10⁻⁴ cm² V⁻¹ s⁻¹ (≈167 times higher than that in the dark condition), threshold voltage (V _th) of 2.1 V, and subthreshold swing (SS) of 3.4 V decade⁻¹ for the p-channel mode, and electron mobility (µ_e ) of ≈1.9 × 10⁻⁴ cm² V⁻¹ s⁻¹, V _th of 3.1 V, and SS of 1.7 V decade⁻¹ for the n-channel mode, respectively. The effects of light illumination on the potentiation and depression properties of the proposed device are discussed. The Chinese handwritten characters from the Institute of Automation of the Chinese Academy of Sciences are used to simulate the image recognition properties. The quasi-2D perovskite offers a new platform for the development of optoelectronic neuromorphic systems and bionic vision.

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用于神经形态计算的准二维钙钛矿基晶体管的高效光电调制

基于有机-无机卤化物钙钛矿的光电调制晶体管可以感知和解析视觉信息，由于其丰富且可调谐的光电特性，高量子效率和大比表面积，使其在神经形态计算或未来视觉自动化中具有吸引力。本文中，准2d (ThMA)2(MA)n- 1pbni3n +1 （n = 4）晶体管表现出n/p型双极性输运特性。在传输特性中观察到的显著的迟滞行为可以通过外部电压和照明来调制。双极性quasi-2D(会员)2 (MA) n-1PbnI3n + 1 (n = 4)晶体管展品最大电荷流动光照明下空穴迁移率(µh)≈1.5×10−4厘米2 V−1 s−1(≈167倍,在黑暗条件),阈值电压(Vth) 2.1 V,和阈下摇摆(SS) 3.4 V 10−1 p沟道模式,和电子迁移率(µe)≈1.9×10−4厘米2 V−1 s−1)Vth 3.1 V,和SS的1.7 V 10−1 n沟道模式,分别。讨论了光照对器件增强和抑制特性的影响。使用中国科学院自动化研究所的中文手写汉字来模拟图像识别特性。准二维钙钛矿为光电神经形态系统和仿生视觉的发展提供了新的平台。

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来源期刊

Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

11.00

自引率

3.20%

发文量

433

期刊介绍： Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.