Stability Improvement of Power MOSFET-Driven Plasma Generation Device for Thin Film Deposition and Chamber Cleaning

IF 2.3 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Semiconductor Manufacturing Pub Date : 2025-01-21 DOI:10.1109/TSM.2025.3532355

Xiaogang Pan;Kangli Liu;Jianfeng Zhao;Cheng Jin;Guojun Zhu;Peiwen Zhu

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Abstract

Regular removal of thin film depositions from vapor deposition chambers is a critical step in semiconductor manufacturing processes, directly impacting the efficiency and quality of production. Traditional manual disassembly cleaning methods have several drawbacks, including the necessity for shutdown operations, cooling treatment and breaking the vacuum, all of which consume considerable time and disrupt the production process. In contrast, plasma cleaning causes less damage to the chamber interior and has therefore become the preferred cleaning method. However, maintaining plasma stability requires a drive power supply with consistent current and frequency to prevent plasma extinction. In this article, the electrical characteristics of the drive power supply for the plasma generation device (PGD) are discussed, considering its dynamic and nonlinear load characteristics of plasma. Through analysis of the equivalent circuit, the condition of current gain equal to 1 is analyzed, thereby achieving the constant-current output. A Power MOSFET-based test platform was established and experimental results validate the effectiveness of the analysis.

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用于薄膜沉积和腔室清洗的功率mosfet驱动等离子体产生装置的稳定性改进

从气相沉积室中定期去除薄膜沉积是半导体制造过程中的关键步骤，直接影响生产的效率和质量。传统的手动拆卸清洗方法有几个缺点，包括需要停机操作，冷却处理和打破真空，所有这些都消耗相当多的时间并扰乱生产过程。相比之下，等离子清洗对腔室内部的损害较小，因此成为首选的清洗方法。然而，保持等离子体稳定性需要具有一致电流和频率的驱动电源，以防止等离子体熄灭。考虑等离子体的动态和非线性负载特性，讨论了等离子体产生装置（PGD）驱动电源的电气特性。通过对等效电路的分析，分析了电流增益等于1的条件，从而实现了恒流输出。建立了基于功率mosfet的测试平台，实验结果验证了分析的有效性。

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来源期刊

IEEE Transactions on Semiconductor Manufacturing 工程技术-工程：电子与电气

CiteScore

5.20

自引率

11.10%

发文量

101

审稿时长

3.3 months

期刊介绍： The IEEE Transactions on Semiconductor Manufacturing addresses the challenging problems of manufacturing complex microelectronic components, especially very large scale integrated circuits (VLSI). Manufacturing these products requires precision micropatterning, precise control of materials properties, ultraclean work environments, and complex interactions of chemical, physical, electrical and mechanical processes.