A Warpage Prediction Model for Trench Field-Plate Power MOSFET in 300mm-Diameter Process

IF 2.3 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Semiconductor Manufacturing Pub Date : 2025-02-19 DOI:10.1109/TSM.2025.3543133

Hiroaki Kato;Bozhou Cai;Jiuyang Yuan;Shin-Ichi Nishizawa;Wataru Saito

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Abstract

A wafer warpage prediction model for trench field-plate MOSFETs on large diameter wafers is proposed. Trench field-plate MOSFETs have deeper trenches and thicker oxides compared to conventional power MOSFETs, and the stress imbalance between the front and back of the wafer must be controlled to suppress wafer warpage in the mass-production process. Therefore, predicting wafer warpage throughout the process is a key technology from the viewpoint of process integration, and its importance is increasing with the use of large-diameter wafers. In this study, as a main process module in trench field-plate power MOSFET process, the processes of trench formation, oxidation, polysilicon deposition, and annealing were examined. The wafer warpage and Raman shift were analyzed by comparing the experiment results with simulations in a 300 mm diameter process. Based on the measured wafer warpage, anisotropic deformation of the poly silicon after annealing was suggested, and a new model considering this anisotropic deformation was developed to predict the through-process for 300 mm wafers.

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300mm直径沟槽场极板功率MOSFET翘曲预测模型

提出了一种大直径晶圆上沟槽场极板mosfet的晶圆翘曲预测模型。与传统功率mosfet相比，沟槽场极板mosfet具有更深的沟槽和更厚的氧化物，并且在量产过程中必须控制晶圆前后的应力不平衡以抑制晶圆翘曲。因此，从工艺集成的角度来看，在整个过程中预测晶圆翘曲是一项关键技术，随着大直径晶圆的使用，其重要性日益增加。在本研究中，作为沟槽场极板功率MOSFET工艺的主要工艺模块，对沟槽形成、氧化、多晶硅沉积和退火工艺进行了研究。通过对比实验结果和模拟结果，分析了直径为300 mm的晶圆翘曲和拉曼位移。根据测量的晶圆翘曲量，提出了多晶硅在退火后的各向异性变形，并建立了一个考虑该各向异性变形的新模型来预测300 mm晶圆的通孔过程。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Semiconductor Manufacturing 工程技术-工程：电子与电气

CiteScore

5.20

自引率

11.10%

发文量

101

审稿时长

3.3 months

期刊介绍： The IEEE Transactions on Semiconductor Manufacturing addresses the challenging problems of manufacturing complex microelectronic components, especially very large scale integrated circuits (VLSI). Manufacturing these products requires precision micropatterning, precise control of materials properties, ultraclean work environments, and complex interactions of chemical, physical, electrical and mechanical processes.