Modulating the structural framework with electron-withdrawing groups and studying their effects on charge mobility in a new series of D-A-D based organic semiconductors
IF 4.2 3区 工程技术Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
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引用次数: 0
Abstract
A systematic computational study was conducted on a new series of donor-acceptor-donor (D-A-D) architecture molecules, featuring bithiazolimide as the acceptor (A) and thiophene as the donor (D), to evaluate the effect of electron-withdrawing substituents on their charge mobility. Density functional theory (DFT) and time-dependent DFT were used to analyze HOMO/LUMO stability, electron affinity (EA), ionization potential (IP), reorganization energy (λ), charge mobility (μ), absorption spectra, and density of states (DOS), revealing the impact of steric and electronic properties on charge transport in the D-A-D framework. The observed trend of variation of the ionization potential and electron affinity suggests increasing charge transfer behaviour with increasing substitution constant. The study reveals that electron mobility is directly proportional to the strength of the electron-withdrawing substituent. Molecules containing -F, -Cl, -CSCH3, -COCH3 and -CF3 exhibited higher electron mobility pointing towards their dominating n-type character, whereas molecules containing -CN and -NO2 showed balanced electron and hole mobilities, suggesting an ambipolar nature. In contrast molecule 4, with a -CSCH3 substituent, demonstrates the highest electron mobility and the smallest HOMO-LUMO gap, making it particularly promising for n-type organic semiconductor applications. The high electron mobility of molecule 4 is further supported by non-covalent interaction (NCI) analysis, which shows S⋯S interactions within the thiophene ring and electron-withdrawing substituents present in the donor moiety. Further, electrostatic potential (ESP) and transition density matrix (TDM) analyses support effective charge separation within these molecules, suggesting an optimized D-A-D system with strong electron-withdrawing substituents and minimal steric hindrance. These findings highlight the potential of these systems in developing high-mobility n-type organic semiconductors, contributing valuable insights for advancing organic electronic devices.
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications.
Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.