Sulfur vacancy engineering mediated preparation of ZnIn2S4 photocatalyst to boost photocatalytic degradation of atrazine

IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Zhuolin Bu, Meng Wang, Zinian Wang, Xiangdong Chen, Zhonghui Fu, Yiping Deng
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引用次数: 0

Abstract

Vacancy engineering has emerged as a pivotal strategy in the advancement of photocatalysts, attracting extensive attention due to its remarkable potential for realizing highly efficient photocatalytic performance. In this work, the sulfur vacancy modified petal-shaped ZnIn2S4 (Sv-ZIS) photocatalyst was synthesized through a simple hydrothermal approach, which was further used to photo catalytically degrade atrazine (ATZ) upon visible light. The results indicated that the synthesized Sv-ZIS achieved a maximum ATZ degradation efficiency of 82.5 %, which surpasses that of unaltered ZIS by 2.72 times. This enhancement resulted from the introduction of sulfur vacancy broadened the light absorption and accelerated the separation of charges and transfer, together with enhanced surface area of ZIS. By combining density functional theory (DFT) calculations and liquid chromatography mass spectrometry (LC-MS) measurements, the ATZ degradation pathway over Sv-ZIS was deduced. Furthermore, toxicity assessment software tools were used to evaluate the toxicity of photodegradation intermediates. This work was facilitated to designed the Sv-ZIS based photocatalyst for the efficient degradation of the agricultural waste water containing ATZ.

Abstract Image

硫空位工程催化制备ZnIn2S4光催化剂促进阿特拉津的光催化降解
空位工程已成为光催化剂发展的关键策略,因其具有实现高效光催化性能的巨大潜力而受到广泛关注。本文通过简单的水热法合成了硫空位修饰的花瓣型ZnIn2S4 (Sv-ZIS)光催化剂,并将其进一步用于可见光光催化降解阿特拉津(ATZ)。结果表明,合成的Sv-ZIS对ATZ的最大降解效率为82.5%,是未改性ZIS的2.72倍。这种增强是由于硫空位的引入扩大了光吸收,加速了电荷和转移的分离,同时增加了ZIS的表面积。结合密度泛函理论(DFT)计算和液相色谱-质谱(LC-MS)测量,推导了Sv-ZIS中ATZ的降解途径。此外,利用毒性评估软件工具对光降解中间体的毒性进行了评估。本研究有助于设计基于Sv-ZIS的光催化剂,用于高效降解含ATZ的农业废水。
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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