1.4-kV Irradiation-Hardened β-Ga₂O₃ Heterojunction Barrier Schottky Diode Under 10⁷ ions/cm² Fluence and 82.1 MeV⋅cm²/mg LET Environments

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-03-24 DOI:10.1109/LED.2025.3553579

Na Sun;Zhengliang Zhang;Feng Zhou;Tianqi Wang;Fang-Fang Ren;Shulin Gu;Hai Lu;Rong Zhang;Jiandong Ye

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引用次数: 0

Abstract

Single event burnout (SEB) caused by heavy ion irradiation in space environments poses a significant threat to aerospace power electronic devices. This work demonstrates irradiation-hardened

$\beta $

-Ga2O3 heterojunction barrier Schottky (HJBS) diodes with exceptional SEB capability. The device design incorporates micron-scale deep trenches filled by p-type nickel oxide (NiO) and high-k BaTiO3 field-plate (FP) edge termination. This architecture efficiently extracts radiation-induced positive charges (holes) during single-event irradiation through the trenched-embedded Ni/p-NiO with low Ohmic contact resistance, significantly alleviating charge aggregation while minimizing non-uniform field distributions through strategically engineered charge drainage pathways. As a result, the HJBS device achieves a SEB voltage exceeding 1.4 kV and a SEB degradation rate of only 9.6%. This is the first demonstration of kilovolt-class radiation-hardened diodes, and its performance metrics are the best reported among SiC, GaN, Ga2O3 and Si power diodes to date. This work underscores the great potential of Ga2O3 power diodes for irradiation power applications.

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在10⁷ions/cm²和82.1 MeV⋅cm²/mg LET环境下，1.4 kv辐照硬化β-Ga₂O₃异质结势垒肖特基二极管

空间环境中重离子辐照引起的单事件烧坏（SEB）对航天电力电子设备构成了重大威胁。这项工作证明了具有特殊SEB能力的辐照硬化$\beta $ -Ga2O3异质结势垒肖特基（HJBS）二极管。该器件设计采用p型氧化镍（NiO）和高k BaTiO3场板（FP）边缘终端填充的微米级深沟槽。该结构通过沟槽嵌入的低欧姆接触电阻的Ni/p-NiO在单事件辐照过程中有效地提取辐射诱导的正电荷（空穴），显著减轻电荷聚集，同时通过精心设计的电荷引流途径最大限度地减少非均匀场分布。因此，HJBS器件实现了超过1.4 kV的SEB电压和仅9.6%的SEB降解率。这是千伏级辐射硬化二极管的首次演示，其性能指标是迄今为止在SiC， GaN， Ga2O3和Si功率二极管中报道的最好的。这项工作强调了Ga2O3功率二极管在辐照功率应用中的巨大潜力。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.