Low-Frequency Noise in Ferroelectric III–V Vertical Gate-All-Around FETs

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-02-26 DOI:10.1109/LED.2025.3546165

Zhongyunshen Zhu;Mamidala Karthik Ram;Anton E. O. Persson;Lars-Erik Wernersson

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引用次数: 0

Abstract

In this letter, we demonstrate low-frequency noise (LFN) characterization of an InAs vertical gate-all-around hafnium-zirconium oxide (HZO) ferroelectric field-effect transistor (FeFET). The LFN characteristics are investigated before and after ferroelectric switching for up to 1000 cycles in the FeFET. The evolution of such cycling reveals distinct differences in the LFN for the two polarization states. The LFN is found to change more during cycling in the high-

${V}_{\text {T}}$

state than in the low-

${V}_{\text {T}}$

state, where the latter has an increased LFN already at various current levels during the first switching cycle. Our findings indicate that the mobility fluctuation and carrier number fluctuation are the dominant source of the LFN for low currents in the off-state and near-

${V}_{\text {T}}$

current levels, respectively, verified by fitting the experimental data to the different models.

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铁电III-V型垂直栅-全能场效应管的低频噪声

在这封信中，我们展示了InAs垂直栅全能氧化铪锆（HZO）铁电场效应晶体管（FeFET）的低频噪声（LFN）特性。研究了ffet中铁电开关前后的LFN特性。这种循环的演变揭示了两种极化状态下LFN的明显差异。在高- ${V}_{\text {T}}$状态下，LFN在循环过程中的变化比低- ${V}_{\text {T}}$状态下更大，后者在第一个切换周期中已经在不同的电流水平上增加了LFN。我们的研究结果表明，在关闭状态和接近- ${V}_{\text {T}}$电流水平的低电流下，迁移率波动和载流子数波动分别是LFN的主要来源，并通过不同模型的实验数据进行了验证。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.