1.27 GW/cm² Reverse Blocking E-Mode GaN-Si(100) Monolithic Heterogeneous Integration Cascode Switch With Ultralow Turn-On Voltage and Dynamic RON

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-02-25 DOI:10.1109/LED.2025.3545417

Yutong Fan;Weihang Zhang;Yachao Zhang;Yinhe Wu;Xin Feng;Zhihong Liu;Yang Jiang;Pui In Mak;Yue Hao;Jincheng Zhang

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引用次数: 0

Abstract

In this letter, an E-Mode GaN-Si(100) monolithic heterogeneous integration cascode switch (RBMHIC-switch) with reverse blocking compatibility on a SiC substrate with an AlN buffer layer is demonstrated. The RBMHIC-switch with LGD of

$22~\mu $

m showed a threshold voltage (VTH) of 2.64 V, a large forward gate voltage swing of 16.27 V, a turn-on voltage (VON) of 0.3 V, and an extremely low reverse leakage current (IR) of

$3.5\times 10^{-{4}}$

mA/mm at -2000 V. The forward breakdown voltage (VFBR) of 2264 V and reverse breakdown voltage (VRBR) of 2183 V with a specific on-resistance (

$R_{\text {ON}, \text {SP}}$

) of 3.74 m

$\Omega \cdot $

cm2 were achieved, resulting in a forward power figure of merit (PFOM = V

$_{\text {BR}}^{{2}}$

/RON,SP) of 1.35 GW/cm2 and reverse PFOM of 1.27 GW/cm2. The ratio between dynamic-RON and static-RON was 1.104 and 1.127 after a 10 ms 1900 V drain stress voltage (V

$_{\text {DS}-\text {OFF}}$

) and a 10 ms -1900 V V

$_{\text {DS}-\text {OFF}}$

(delay time

$= 1~\mu $

s) for the RBMHIC-switches, respectively, which were the best among all existing GaN power devices with reverse blocking capability. The thermal resistance at different temperatures was also extracted. The RBMHIC-switche shows decent overall characteristics as compared to the reported results.

查看原文本刊更多论文

1.27 GW/cm²反向阻断e模GaN-Si（100）单片异构级联开关，超低导通电压和动态RON

在这封信中，展示了在具有AlN缓冲层的SiC衬底上具有反向阻塞兼容性的E-Mode GaN-Si（100）单片异质集成级联开关（rbmhicc开关）。LGD为$22~\mu $ m的rbmlic开关，其阈值电压为2.64 V，正向栅极电压摆幅为16.27 V，导通电压为0.3 V，在-2000 V时的极低反向漏电流为$3.5\times 10^{-{4}}$ mA/mm。正击穿电压（VFBR）为2264 V，反向击穿电压（VRBR）为2183 V，比导通电阻（$R_{\text {ON}, \text {SP}}$）为3.74 m $\Omega \cdot $ cm2，从而获得正向功率优值（PFOM = V $_{\text {BR}}^{{2}}$ /RON，SP）为1.35 GW/cm2，反向PFOM为1.27 GW/cm2。rbmlic开关在10ms 1900 V漏极应力电压（V $_{\text {DS}-\text {OFF}}$）和10ms -1900 V V $_{\text {DS}-\text {OFF}}$（延迟时间$= 1~\mu $ s）下的动态ron和静态ron之比分别为1.104和1.127，是现有GaN功率器件中反向阻断能力最好的。并提取了不同温度下的热阻。与报告的结果相比，rbmhic开关显示出良好的总体特征。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.