E. B. Abubakirov;A. N. Denisenko;N. S. Ginzburg;A. N. Leontyev;R. M. Rozental;A. S. Sergeev;I. V. Zotova
{"title":"Non-Stationary Wide-Band Operation of a High-Current Relativistic Gyrotron","authors":"E. B. Abubakirov;A. N. Denisenko;N. S. Ginzburg;A. N. Leontyev;R. M. Rozental;A. S. Sergeev;I. V. Zotova","doi":"10.1109/LED.2025.3545935","DOIUrl":null,"url":null,"abstract":"We report on the first experimental studied of a Ka-band high-current relativistic gyrotron with an increased length of the interaction space. Wideband non-stationary operation with an output power of up to 70 MW and an efficiency of ~7% are registered. Based on comparison of experimental data and simulations, we estimate the output radiation spectrum width to be at least 2 GHz.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 5","pages":"852-855"},"PeriodicalIF":4.1000,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Electron Device Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10904484/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
We report on the first experimental studied of a Ka-band high-current relativistic gyrotron with an increased length of the interaction space. Wideband non-stationary operation with an output power of up to 70 MW and an efficiency of ~7% are registered. Based on comparison of experimental data and simulations, we estimate the output radiation spectrum width to be at least 2 GHz.
期刊介绍:
IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.