First-principles analysis of potassium and magnesium adsorption on an innovative VC4 monolayer

IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Yujia Luo , Xinying Jiang , Qiong Peng , Javed Rehman , Mohib Ullah , Saiful Arifin Shafiee , Lin Tao , Muhammad Faizan , Ammar M. Tighezza , Mehwish K. Butt
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Abstract

Mg-ion batteries (MgIBs) and K-ion batteries (KIBs) are considered excellent energy storage options due to their affordability and similarity to Li-ion batteries (LIBs) regarding the rocking chair mechanism. Nevertheless, a significant challenge exists in the form of a shortage of suitable electrode materials that can provide high performance for KIBs and MgIBs. Our study utilized first-principles calculations based on density functional theory (DFT) to evaluate the potential of the VC4 monolayer as an anode material for MgIBs and KIBs. The results indicate that Mg and K adsorption on the surface of VC4 is associated with negative favorable energies. Moreover, the VC4 monolayer can effectively achieve double-layer adsorption for K/Mg on both sides of its surface. The VC4 exhibits a remarkably high theoretical capability of 812 mA h/g for KIBs and 1624 mA h/g for MgIBs. These exceptional capacities for KIBs and MgIBs primarily arise from the minimal Coulombic repulsion forces between the VC4 sheet and K/Mg. Moreover, K and Mg portray large diffusivity on VC4, illustrated by low energy barriers of 0.15 eV and 0.09 eV, respectively. Moreover, the open circuit voltages (OCV), measuring 0.28 V for MgIBs and 0.49 V for KIBs, are notably lower than in previous studies. Despite the relatively large size of K+/Mg+ ions, the maximum alteration in VC4 lattice parameters stands at 6.01 % and 6.8 %, respectively. This observation highlights the material's structural stability, ensuring robust cycling performance for KIBs and MgIBs. These results underscore the potential of the VC4 monolayer as a novel candidate for KIBs and MgIBs.

Abstract Image

新型VC4单层膜对钾、镁吸附的第一性原理分析
镁离子电池(MgIBs)和钾离子电池(KIBs)被认为是优秀的储能选择,因为它们价格合理,并且在摇椅机制上与锂离子电池(LIBs)相似。然而,一个重大的挑战是缺乏合适的电极材料,可以为kib和mgib提供高性能。我们的研究利用基于密度泛函理论(DFT)的第一性原理计算来评估VC4单层作为mgib和kib阳极材料的潜力。结果表明,Mg和K在VC4表面的吸附与负有利能相关。此外,VC4单层可以在其表面两侧有效地实现对K/Mg的双层吸附。VC4表现出非常高的理论性能,kib为812 mA h/g, mgib为1624 mA h/g。kib和mgib的这些特殊能力主要来自于VC4薄片和K/Mg之间的最小库仑排斥力。此外,K和Mg在VC4上表现出较大的扩散率,分别表现为0.15 eV和0.09 eV的低能垒。此外,mgib的开路电压(OCV)为0.28 V, kib为0.49 V,明显低于之前的研究。尽管K+/Mg+离子尺寸较大,但VC4晶格参数的最大变化分别为6.01%和6.8%。这一观察结果突出了材料的结构稳定性,确保了kib和mgib的强大循环性能。这些结果强调了VC4单层作为kib和mgib的新候选物的潜力。
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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