Thermal coupling between FD-SOI FETs at cryogenic temperatures

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-04-22 DOI:10.1016/j.sse.2025.109132

Martin Vanbrabant, Jean-Pierre Raskin, Valeriya Kilchytska

引用次数: 0

Abstract

This work studies the thermal coupling between two side-by-side FD-SOI MOSFETs at liquid nitrogen temperature in comparison to the room temperature one. The temperature rise experienced by the device due to the self-heating of a neighbor one is estimated by making a comparison to a referenced g_m/I_d curve as a function of chuck temperature. The impact of thermal coupling effects is studied on main digital (SS, V_th, I_on, I_off and I_on/I_off) and analog (g_m and g_m/I_d) figures of merit. We demonstrate that electrical parameters degradation caused by the operation (heating) of the neighbor device can be up to 50 % more important at 77 K than at 295 K.

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FD-SOI场效应管在低温下的热耦合

本文研究了两个并排FD-SOI mosfet在液氮温度下与室温下的热耦合。通过与参考的gm/Id曲线作为卡盘温度的函数进行比较，可以估计设备由于相邻设备的自热而经历的温升。研究了热耦合效应对主数字参量（SS、Vth、Ion、Ioff和Ion/Ioff）和模拟参量（gm和gm/Id）的影响。我们证明了由相邻器件的操作（加热）引起的电气参数退化在77 K时比在295 K时要重要50%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.