Studies on resistive switching mechanisms in RRAM memory structures based on copper (II) oxide

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-04-22 DOI:10.1016/j.sse.2025.109140

M. Ozga , R. Mroczynski , A. Wolska , M. Klepka , M. Godlewski , B.S. Witkowski

引用次数: 0

Abstract

Hydrothermally grown copper (II) oxide (CuO) films exhibit the memristive phenomenon, which makes them a promising candidate for application in resistive random-access memories (RRAM). Understanding the basic physical phenomena responsible for resistive switching holds significant promise for advancing this technology. This work presents research findings on the switching and charge carrier transport mechanisms in RRAM structures based on CuO films. These mechanisms were identified using conductive AFM and by analyzing current–voltage characteristics. Obtained results revealed the presence of trap-limited and trap-filled space charge limited current mechanisms in the broad examined voltage range.

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基于氧化铜的RRAM存储器结构中电阻开关机制的研究

水热生长的铜（II）氧化物（CuO）薄膜表现出记忆现象，这使它们成为电阻随机存取存储器（RRAM）应用的有希望的候选者。了解导致电阻开关的基本物理现象对推进该技术具有重要意义。本文介绍了基于CuO薄膜的RRAM结构的开关和载流子输运机制的研究成果。这些机制是通过导电AFM和分析电流-电压特性来确定的。得到的结果表明，在广泛的电压范围内存在限阱和充满阱的空间电荷限流机制。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.