Operation of junctionless nanowire transistors down to 4.2 Kelvin

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-04-23 DOI:10.1016/j.sse.2025.109133

F.E. Bergamaschi , J.A. Matos , M. de Souza , S. Barraud , M. Cassé , O. Faynot , M.A. Pavanello

引用次数: 0

Abstract

In this work, an experimental characterization of SOI junctionless nanowire transistors operating in liquid helium temperature is conducted. DC measurements are performed in a temperature range from 300 K down to 4.2 K in devices with variable geometrical dimensions, namely the gate length and the fin width. Different electrical parameters are analyzed, such as the threshold voltage, the subthreshold slope, the low-field mobility, and the drain-induced barrier lowering (DIBL). The temperature reduction helps partially suppress short-channel effects, leading to improvement in these parameters while preserving good electrostatic control, even for highly scaled channel lengths.

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操作低至4.2开尔文的无结纳米线晶体管

本文对在液氦温度下工作的SOI无结纳米线晶体管进行了实验表征。在具有可变几何尺寸（即栅极长度和鳍片宽度）的器件中，在300 K至4.2 K的温度范围内进行直流测量。分析了不同的电参数，如阈值电压、亚阈值斜率、低场迁移率和漏极势垒降低（DIBL）。温度降低有助于部分抑制短通道效应，从而改善这些参数，同时保持良好的静电控制，即使对于高度缩放的通道长度也是如此。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.