Development of sustainable NiFe2O4/ZnO/g-C3N4 nanohybrid electrocatalyst for bi-functional HER and OER applications

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-04-28 DOI:10.1016/j.mssp.2025.109589

V. Siva , L. Kumaresan , P. Velusamy , Govindasamy Palanisamy , T. Chellapandi , N. Dineshbabu

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Abstract

Water splitting by electrochemistry is a crucial technique for producing clean hydrogen. Noble metals must be replaced with long-lasting, effective, and reasonably priced electrocatalysts in the development of renewable energy technology. This work presents a hydrothermal method for creating a NiFe₂O₄/ZnO/g-C₃N₄ ternary nano electrocatalyst for efficient water-splitting applications. The phase formation, morphology, chemical states, and elemental composition of the synthesized electrocatalysts were thoroughly explored. In this work, ternary nano electrocatalysts showed enhanced electrochemical performance. Specifically, NiFe₂O₄/ZnO/g-C₃N₄ electrocatalyst exhibited enhanced OER activity with an overpotential of 224 mV at 10 mA/cm² current density and a Tafel slope value of 120 mV/dec. For HER, the electrocatalyst showed 120 mV as overpotential at a current density of 10 mA/cm² with a Tafel slope value of 121 mV/dec. These results highlight the advantages of hybridizing metal oxides with carbon-based counterparts for OER and HER.

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可持续发展的NiFe2O4/ZnO/g-C3N4纳米杂化电催化剂的双功能HER和OER应用

电化学解水是生产清洁氢的关键技术。在可再生能源技术的发展中，贵金属必须被持久、有效、价格合理的电催化剂所取代。本文提出了一种水热法制备NiFe2O4/ZnO/g-C3N4三元纳米电催化剂的方法。对所合成的电催化剂的相形成、形态、化学状态和元素组成进行了深入的研究。在这项工作中，三元纳米电催化剂表现出了增强的电化学性能。具体来说，NiFe2O4/ZnO/g-C3N4电催化剂在10 mA/cm2电流密度下的过电位为224 mV， Tafel斜率值为120 mV/dec时，OER活性增强。对于HER，电催化剂在电流密度为10 mA/cm2时的过电位为120 mV， Tafel斜率为121 mV/dec。这些结果突出了金属氧化物与碳基氧化物杂化在OER和HER中的优势。

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.