Interfacial Photogating of Graphene Field-Effect Transistor for Photosensory Biomolecular Detection

IF 5.3 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Leslie Howe, Yifei Wang, Kalani H. Ellepola, Vinh X. Ho, Rosalie L. Dohmen, Marlo M. Pinto, Wouter D. Hoff, Michael P. Cooney, Nguyen Q. Vinh
{"title":"Interfacial Photogating of Graphene Field-Effect Transistor for Photosensory Biomolecular Detection","authors":"Leslie Howe, Yifei Wang, Kalani H. Ellepola, Vinh X. Ho, Rosalie L. Dohmen, Marlo M. Pinto, Wouter D. Hoff, Michael P. Cooney, Nguyen Q. Vinh","doi":"10.1002/aelm.202400716","DOIUrl":null,"url":null,"abstract":"The photogating effect, induced by a light-driven gate voltage, modulates the potential energy of the active channel in field-effect transistors, leading to a high photoconductive gain of these devices. The effect is particularly pronounced in low-dimensional structures, especially in graphene field-effect transistors. Along with unusual optical and electrical properties, graphene with ultra-high carrier mobility and a highly sensitive surface generates a strong photogating effect in the structure, making it an excellent element for detecting light-sensitive biomolecules. In this work, graphene field-effect transistor biosensors is demonstrated for the rapid detection of photoactive yellow protein in an aqueous solution under optical illumination. The devices exhibit millisecond-scale response times and achieve a detection limit below 5.8 fM under blue-light excitation, consistent with the absorption characteristics of the protein. The photogating effect in graphene field-effect transistors provides a promising approach for developing high-performance, light-sensitive biosensors for biomolecular detection applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"7 1","pages":""},"PeriodicalIF":5.3000,"publicationDate":"2025-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1002/aelm.202400716","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

Abstract

The photogating effect, induced by a light-driven gate voltage, modulates the potential energy of the active channel in field-effect transistors, leading to a high photoconductive gain of these devices. The effect is particularly pronounced in low-dimensional structures, especially in graphene field-effect transistors. Along with unusual optical and electrical properties, graphene with ultra-high carrier mobility and a highly sensitive surface generates a strong photogating effect in the structure, making it an excellent element for detecting light-sensitive biomolecules. In this work, graphene field-effect transistor biosensors is demonstrated for the rapid detection of photoactive yellow protein in an aqueous solution under optical illumination. The devices exhibit millisecond-scale response times and achieve a detection limit below 5.8 fM under blue-light excitation, consistent with the absorption characteristics of the protein. The photogating effect in graphene field-effect transistors provides a promising approach for developing high-performance, light-sensitive biosensors for biomolecular detection applications.

Abstract Image

用于光敏生物分子检测的石墨烯场效应晶体管界面光门控
由光驱动栅极电压引起的光门效应,调制场效应晶体管有源通道的势能,导致这些器件具有较高的光导增益。这种效应在低维结构中尤其明显,尤其是在石墨烯场效应晶体管中。具有超高载流子迁移率和高敏感表面的石墨烯具有不同寻常的光学和电学特性,在结构中产生了强烈的光门效应,使其成为检测光敏生物分子的绝佳元素。在这项工作中,石墨烯场效应晶体管生物传感器被证明可以在光学照明下快速检测水溶液中的光活性黄色蛋白。该装置具有毫秒级的响应时间,在蓝光激发下达到5.8 fM以下的检测限,与蛋白质的吸收特性一致。石墨烯场效应晶体管中的光门效应为开发用于生物分子检测的高性能、光敏生物传感器提供了一条有前途的途径。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Advanced Electronic Materials
Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
11.00
自引率
3.20%
发文量
433
期刊介绍: Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信