Tunneling Dielectric Thickness-Dependent Behaviors in Transistors Based on Sandwiched Small Molecule and Insulating Layer Structures (Adv. Electron. Mater. 5/2025)

IF 5.3 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Advanced Electronic Materials Pub Date : 2025-04-23 DOI:10.1002/aelm.202570014

Dong Hyun Lee, Yunchae Jeon, Junhwan Choi, Hocheon Yoo

引用次数: 0

Abstract

Tunneling Dielectric Thickness

In article number 2400910, Junhwan Choi, Hocheon Yoo, and co-workers present floating gate devices with tunable characteristics based on the parylene tunneling dielectric layer (TDL) thickness. Thin TDLs enable tunneling, while thicker layers exhibit photomemory with robust retention and flexibility on paper substrates.

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来源期刊

Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

11.00

自引率

3.20%

发文量

433

期刊介绍： Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.