Failure evolution analysis of SiC power modules in electric-thermal-mechanical multi-physical fields

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability Pub Date : 2025-04-23 DOI:10.1016/j.microrel.2025.115751

Yifeng Chen , Xin Lan , Lezhou Li , Xin Li , Ziyang Zhang , Gongming Xin

{"title":"Failure evolution analysis of SiC power modules in electric-thermal-mechanical multi-physical fields","authors":"Yifeng Chen , Xin Lan , Lezhou Li , Xin Li , Ziyang Zhang , Gongming Xin","doi":"10.1016/j.microrel.2025.115751","DOIUrl":null,"url":null,"abstract":"<div><div>The reliability of SiC power devices is affected by the coupling effects of electric-thermal-mechanical multi-physical fields, and its mechanism is still not totally revealed. In this study, a coupled electric-thermal-mechanical multi-physical model is proposed for a SiC power module, and the effects of die position, power loss of bonding wires, as well as bonding position on reliability are investigated. Additionally, a failure evolution model is further developed based on the multi-physical model. The results indicate that delamination around the corner of the solder layer significantly affects the temperature distribution of the bonding wires. The farther the bonding point is away from the hot spot of the die, the greater the temperature rise of the bonding wire, and vice versa. During the failure evolution, the temperature of the damaged bonding wires first increases with slight damage and then decreases with serious damage accumulation. The temperature of the parallel bonding wires increases significantly once the damaged wire is broken.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"169 ","pages":"Article 115751"},"PeriodicalIF":1.6000,"publicationDate":"2025-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Reliability","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0026271425001647","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

The reliability of SiC power devices is affected by the coupling effects of electric-thermal-mechanical multi-physical fields, and its mechanism is still not totally revealed. In this study, a coupled electric-thermal-mechanical multi-physical model is proposed for a SiC power module, and the effects of die position, power loss of bonding wires, as well as bonding position on reliability are investigated. Additionally, a failure evolution model is further developed based on the multi-physical model. The results indicate that delamination around the corner of the solder layer significantly affects the temperature distribution of the bonding wires. The farther the bonding point is away from the hot spot of the die, the greater the temperature rise of the bonding wire, and vice versa. During the failure evolution, the temperature of the damaged bonding wires first increases with slight damage and then decreases with serious damage accumulation. The temperature of the parallel bonding wires increases significantly once the damaged wire is broken.

查看原文本刊更多论文

电-热-机械多物理场中 SiC 功率模块的故障演化分析

SiC功率器件的可靠性受到电-热-机械多物理场耦合效应的影响，其机理尚未完全揭示。本文提出了SiC电源模块的电-热-机械耦合多物理模型，并研究了模具位置、键合线功率损耗以及键合位置对可靠性的影响。在此基础上，进一步建立了基于多物理模型的破坏演化模型。结果表明，焊料层边缘的脱层对焊线的温度分布有显著影响。键合点离模具的热点越远，键合线的温升越大，反之亦然。在破坏演化过程中，损伤焊线的温度先升高，损伤程度较轻；一旦损坏导线断裂，并联键合导线的温度显著升高。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Microelectronics Reliability 工程技术-工程：电子与电气

CiteScore

3.30

自引率

12.50%

发文量

342

审稿时长

68 days

期刊介绍： Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.