Understanding the Effects of Ta Doping in Sb2Te3 for High-Performance Phase Change Memory

IF 5.3 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Advanced Electronic Materials Pub Date : 2025-04-23 DOI:10.1002/aelm.202400790

Hansang Sung, Jaemin Park, Siwoo Kim, Hyoin Song, Chanwoong Park, Jaein Park, Sucheol Ju, Heon Lee

{"title":"Understanding the Effects of Ta Doping in Sb2Te3 for High-Performance Phase Change Memory","authors":"Hansang Sung, Jaemin Park, Siwoo Kim, Hyoin Song, Chanwoong Park, Jaein Park, Sucheol Ju, Heon Lee","doi":"10.1002/aelm.202400790","DOIUrl":null,"url":null,"abstract":"Phase change memory is a leading candidate for storage class memory (SCM). Among various phase-change materials, Sb-Te-based materials, which have high-speed operation characteristics, are actively studied. Herein, a high-performance phase-change material is designed for doping tantalum (Ta) inside Sb2Te3 (ST). To optimize the Ta doping concentration, Ta-doped ST films with various Ta concentrations are fabricated using a sputtering process. The phase change characteristics of the fabricated Ta-doped ST films of various concentrations are analyzed, and the crystallographic, structural, and electrical effects of Ta doping inside Sb2Te3 are analyzed. Analysis of the Ta doping effect on Sb2Te3 shows that the crystallization temperature of the ST-based phase-change material increased and that grain growth is suppressed, thereby affecting electrical conductivity. Consequently, the optimized Ta doping concentration as a phase-change material is obtained. A phase change memory device is fabricated using optimized Ta(0.41):ST and confirmed to have fast set speed (≈15 ns) and low resistance drift characteristics. Through this study, the Ta doping effect of Sb2Te3 is extensively analyzed, and the optimal Ta doping concentration is demonstrated. It is confirmed that Ta-doped ST is a high-performance phase-change material applicable to next-generation SCM.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"30 1","pages":""},"PeriodicalIF":5.3000,"publicationDate":"2025-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1002/aelm.202400790","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}

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Abstract

Phase change memory is a leading candidate for storage class memory (SCM). Among various phase-change materials, Sb-Te-based materials, which have high-speed operation characteristics, are actively studied. Herein, a high-performance phase-change material is designed for doping tantalum (Ta) inside Sb₂Te₃ (ST). To optimize the Ta doping concentration, Ta-doped ST films with various Ta concentrations are fabricated using a sputtering process. The phase change characteristics of the fabricated Ta-doped ST films of various concentrations are analyzed, and the crystallographic, structural, and electrical effects of Ta doping inside Sb₂Te₃ are analyzed. Analysis of the Ta doping effect on Sb₂Te₃ shows that the crystallization temperature of the ST-based phase-change material increased and that grain growth is suppressed, thereby affecting electrical conductivity. Consequently, the optimized Ta doping concentration as a phase-change material is obtained. A phase change memory device is fabricated using optimized Ta(0.41):ST and confirmed to have fast set speed (≈15 ns) and low resistance drift characteristics. Through this study, the Ta doping effect of Sb₂Te₃ is extensively analyzed, and the optimal Ta doping concentration is demonstrated. It is confirmed that Ta-doped ST is a high-performance phase-change material applicable to next-generation SCM.

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了解在 Sb2Te3 中掺杂 Ta 对高性能相变存储器的影响

相变存储器是存储类存储器（SCM）的主要候选材料。在各种相变材料中，具有高速运行特性的 Sb-Te 基材料正受到积极研究。本文设计了一种在 Sb2Te3（ST）中掺杂钽（Ta）的高性能相变材料。为了优化钽掺杂浓度，采用溅射工艺制备了不同浓度的钽掺杂 ST 薄膜。分析了所制备的不同浓度掺杂 Ta 的 ST 薄膜的相变特性，以及在 Sb2Te3 中掺杂 Ta 对晶体学、结构和电学的影响。对 Sb2Te3 的 Ta 掺杂效应分析表明，ST 相变材料的结晶温度升高，晶粒生长受到抑制，从而影响了导电性。因此，得到了作为相变材料的最佳 Ta 掺杂浓度。使用优化的 Ta(0.41):ST 制造出了相变存储器件，并证实其具有快速设置速度（≈15 ns）和低电阻漂移特性。这项研究广泛分析了 Sb2Te3 的 Ta 掺杂效应，并证明了最佳的 Ta 掺杂浓度。研究证实，掺杂 Ta 的 ST 是一种适用于下一代单片机的高性能相变材料。

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来源期刊

Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

11.00

自引率

3.20%

发文量

433

期刊介绍： Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.