Reactive sputtering deposited α-MoO3 thin films for forming-free resistive random-access memory

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-04-18 DOI:10.1016/j.sse.2025.109130

Zeqi Guo , Xiaoxu Lai , Wenhui Xu , Dan Sun , Chi Chen

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Abstract

In this study, α-MoO₃ thin films were prepared on single-side polished (1 0 0) silicon substrates using radio-frequency reactive sputtering. By adjusting the substrate temperature and oxygen proportion, α-MoO₃ thin films with desirable crystal phase and surface morphology were successfully grown. The substrate temperature exceeded 400℃ and the oxygen proportion of 50 % are essential for the deposition of a single-phase polycrystalline α-MoO₃ film with abundant oxygen vacancies. A resistive random-access memory (RRAM) device fabricated by the as-prepared α-MoO₃ film exhibited stable resistive switching characteristics with a forming-free behavior, achieving set/reset voltages below 0.3 V, a cycling durability over 250 cycles and an ON/OFF ratio of 10². Furthermore, I-V curve fitting analysis revealed a trap-controlled electron conduction mechanism in the RRAM device, where the high-resistance state exhibited a space-charge-limited current (SCLC) conduction mode. This study demonstrates the significant potential of radio-frequency reactive sputtering for fabricating functional materials for the application of electronic devices.

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.