Improved SnO2 modified TiO2 as anode material for lithium-ion battery: Cyclic stability and electrochemical lithiation study

IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Cheng-Hsun Ho , Cheng-Yo Tsai , Jow-Lay Huang , Chia-Chin Chang , Dipti R. Sahu , Yu-Min Shen
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Abstract

The anode material has a remarkable effect on the overall performance of the Lithium-ion battery. In this study SnO2 modified TiO2 (SnO2@TiO2) composite as anode material was synthesized using simple and cost effective hydrothermal and chemical bath deposition method. This work improves the electrochemical performance of TiO2 through structural nanostructuring and combination with high-capacity SnO2. X-ray photoelectron spectroscopy (XPS) confirmed the successful modification of TiO2 with Sn4+. Electrochemical tests demonstrated that sample annealed at 500 °C (ST-500 °C) exhibited the best performance among all samples. At a low charge/discharge rate (0.1 C), its initial delithiation capacity reached 422.7 mAh/g, a significant improvement compared to 271.1 mAh/g for pristine TiO2. Additionally, ST-500 °C achieved an initial Coulombic efficiency of 62.3 % and retained 79.8 % of its capacity after 100 cycles. After high-current cycling, the capacity recovery rate was as high as 90.3 % when returned to a 0.1 C rate. These results indicate that SnO2@TiO2 demonstrates excellent cycling stability and rate performance. Pre-lithiation with appropriate pre-lithiation parameters (1.0 V and 5 h) significantly enhances the battery's performance and cycling life.
改进的 SnO2 改性 TiO2 作为锂离子电池的负极材料:循环稳定性和电化学锂化研究
负极材料对锂离子电池的整体性能有显著影响。本研究采用简单、低成本的水热法和化学沉积法合成了 SnO2 改性 TiO2(SnO2@TiO2)复合材料作为负极材料。这项工作通过结构纳米化以及与高容量 SnO2 的结合提高了 TiO2 的电化学性能。X 射线光电子能谱(XPS)证实了二氧化钛与 Sn4+ 的成功改性。电化学测试表明,在所有样品中,500 °C退火的样品(ST-500 °C)性能最佳。在较低的充放电速率(0.1 C)下,其初始脱硫容量达到 422.7 mAh/g,与原始 TiO2 的 271.1 mAh/g 相比有显著提高。此外,ST-500 °C 的初始库仑效率为 62.3%,循环 100 次后,其容量保持率为 79.8%。大电流循环后,容量恢复率高达 90.3%,恢复到 0.1 C 的速率。这些结果表明,SnO2@TiO2 具有出色的循环稳定性和速率性能。采用适当的预锂化参数(1.0 V 和 5 小时)进行预锂化,可显著提高电池的性能和循环寿命。
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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