An ab initio approach to understand the structural, mechanical, thermophysical, electronic, and optical properties of topological insulators AMg2Bi2 (A = Ca, Yb)

IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Md. Thouhidur Rashid , B. Rahman Rano , Suptajoy Barua , Ishtiaque M. Syed , S.H. Naqib
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Abstract

The exceptional thermoelectric and magnetic properties exhibited by thermoelectric materials are widely recognized. In contrast, the recent discovery of non-trivial topological phases in several thermoelectric materials, such as AMg2Bi2 (A = Ca, Yb), has introduced novel avenues for further research. AMg2Bi2 is a strong Z2 topological insulator due to its narrow band gap and topological surface electronic states. By employing the generalized gradient approximation (GGA) within the density functional theory (DFT), we have thoroughly investigated the mechanical, electronic, optical, and elastic characteristics of AMg2Bi2. The result indicates that the substance is soft, brittle, mechanically stable, and moderately machinable. Furthermore, the results indicate that a considerable quantity of covalent and metallic bonding is present in the crystal structure. A relatively low Debye temperature implies that the substance being studied is soft and has weakly bonded atoms. In the presence of spin-orbit coupling (SOC), electronic band structure calculations reveal the characteristics of topological insulators with a Dirac cone and band inversion observed at the Γ-point. Additionally, the optical properties of AMg2Bi2 at different photon energies are investigated. AMg2Bi2 exhibits a significant refractive index in the visible spectrum. Both compounds are very capable of effectively absorbing low-energy UV light. However, they exhibit exceptional reflective properties when exposed to high-energy UV radiation. All of these optical properties can be used in optoelectronic device applications.

Abstract Image

了解拓扑绝缘体 AMg2Bi2(A = Ca、Yb)的结构、机械、热物理、电子和光学特性的 ab initio 方法
热电材料所表现出的卓越热电和磁性能已得到广泛认可。相比之下,最近在 AMg2Bi2(A = Ca、Yb)等几种热电材料中发现的非三维拓扑相为进一步研究开辟了新途径。AMg2Bi2 因其窄带隙和拓扑表面电子态而成为强 Z2 拓扑绝缘体。通过采用密度泛函理论(DFT)中的广义梯度近似(GGA),我们深入研究了 AMg2Bi2 的机械、电子、光学和弹性特性。研究结果表明,这种物质柔软、脆性大、机械性能稳定,并具有适度的可加工性。此外,研究结果表明,晶体结构中存在大量共价键和金属键。相对较低的德拜温度意味着所研究的物质很软,原子结合力很弱。在存在自旋轨道耦合(SOC)的情况下,电子能带结构计算揭示了拓扑绝缘体的特征,在Γ点观察到了狄拉克锥和能带反转。此外,还研究了 AMg2Bi2 在不同光子能量下的光学特性。AMg2Bi2 在可见光谱中显示出显著的折射率。这两种化合物都能有效吸收低能量紫外线。然而,当暴露在高能量紫外线辐射下时,它们会表现出特殊的反射特性。所有这些光学特性都可用于光电设备应用。
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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