An ab initio approach to understand the structural, mechanical, thermophysical, electronic, and optical properties of topological insulators AMg2Bi2 (A = Ca, Yb)
IF 4.2 3区 工程技术Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Md. Thouhidur Rashid , B. Rahman Rano , Suptajoy Barua , Ishtiaque M. Syed , S.H. Naqib
{"title":"An ab initio approach to understand the structural, mechanical, thermophysical, electronic, and optical properties of topological insulators AMg2Bi2 (A = Ca, Yb)","authors":"Md. Thouhidur Rashid , B. Rahman Rano , Suptajoy Barua , Ishtiaque M. Syed , S.H. Naqib","doi":"10.1016/j.mssp.2025.109570","DOIUrl":null,"url":null,"abstract":"<div><div>The exceptional thermoelectric and magnetic properties exhibited by thermoelectric materials are widely recognized. In contrast, the recent discovery of non-trivial topological phases in several thermoelectric materials, such as AMg<sub>2</sub>Bi<sub>2</sub> (A = Ca, Yb), has introduced novel avenues for further research. AMg<sub>2</sub>Bi<sub>2</sub> is a strong Z<sub>2</sub> topological insulator due to its narrow band gap and topological surface electronic states. By employing the generalized gradient approximation (GGA) within the density functional theory (DFT), we have thoroughly investigated the mechanical, electronic, optical, and elastic characteristics of AMg<sub>2</sub>Bi<sub>2</sub>. The result indicates that the substance is soft, brittle, mechanically stable, and moderately machinable. Furthermore, the results indicate that a considerable quantity of covalent and metallic bonding is present in the crystal structure. A relatively low Debye temperature implies that the substance being studied is soft and has weakly bonded atoms. In the presence of spin-orbit coupling (SOC), electronic band structure calculations reveal the characteristics of topological insulators with a Dirac cone and band inversion observed at the Γ-point. Additionally, the optical properties of AMg<sub>2</sub>Bi<sub>2</sub> at different photon energies are investigated. AMg<sub>2</sub>Bi<sub>2</sub> exhibits a significant refractive index in the visible spectrum. Both compounds are very capable of effectively absorbing low-energy UV light. However, they exhibit exceptional reflective properties when exposed to high-energy UV radiation. All of these optical properties can be used in optoelectronic device applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"194 ","pages":"Article 109570"},"PeriodicalIF":4.2000,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800125003075","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
The exceptional thermoelectric and magnetic properties exhibited by thermoelectric materials are widely recognized. In contrast, the recent discovery of non-trivial topological phases in several thermoelectric materials, such as AMg2Bi2 (A = Ca, Yb), has introduced novel avenues for further research. AMg2Bi2 is a strong Z2 topological insulator due to its narrow band gap and topological surface electronic states. By employing the generalized gradient approximation (GGA) within the density functional theory (DFT), we have thoroughly investigated the mechanical, electronic, optical, and elastic characteristics of AMg2Bi2. The result indicates that the substance is soft, brittle, mechanically stable, and moderately machinable. Furthermore, the results indicate that a considerable quantity of covalent and metallic bonding is present in the crystal structure. A relatively low Debye temperature implies that the substance being studied is soft and has weakly bonded atoms. In the presence of spin-orbit coupling (SOC), electronic band structure calculations reveal the characteristics of topological insulators with a Dirac cone and band inversion observed at the Γ-point. Additionally, the optical properties of AMg2Bi2 at different photon energies are investigated. AMg2Bi2 exhibits a significant refractive index in the visible spectrum. Both compounds are very capable of effectively absorbing low-energy UV light. However, they exhibit exceptional reflective properties when exposed to high-energy UV radiation. All of these optical properties can be used in optoelectronic device applications.
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
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Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.