Demonstration of thermoelectrically cooled MWIR InAs/GaSb focal plane arrays

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-04-19 DOI:10.1016/j.mssp.2025.109573

Agata Jasik, Krzysztof Czuba, Paweł Kozłowski, Iwona Sankowska, Marta Różycka, Maciej Fokt, Krzysztof Chmielewski, Ewa Papis-Polakowska, Adam Łaszcz, Joanna Branas, Krzysztof Hejduk, Krzysztof Bracha, Marek Wzorek, Adam Korczyc, Kazimierz Regiński

引用次数: 0

Abstract

Thermoelectrically cooled focal plane arrays (FPAs) for the mid-wavelength infrared spectral range have been demonstrated. The mesa-shaped pixels were formed in pin InAs/GaSb heterostructure using dry etching. FPA with 320 × 256 resolution and a pixel pitch of 30 μm was obtained. Indium die-bonding was applied to connect FPA and a read-out integrated circuit. The thermoelectrically cooled hybrid was hermetically sealed in a vacuum housing with a silicon window. The pictures of the hot soldering tip were detected using FPA at different temperatures.

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热电冷却MWIR InAs/GaSb焦平面阵列的演示

研究了用于中波长红外光谱范围的热电冷却焦平面阵列（fpa）。采用干刻蚀法在引脚InAs/GaSb异质结构中形成了台面状像素。得到了分辨率为320 × 256，像素间距为30 μm的FPA。采用铟模键连接FPA和读出集成电路。热电冷却混合动力是密封在一个真空外壳与硅窗。利用FPA对不同温度下的热钎头图像进行检测。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

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