Effect of thermal treatments on forming-free resistive switching behaviors of sol-gel-derived Nd2Zr2O7 thin films in metal/insulator/metal structures

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-04-19 DOI:10.1016/j.mssp.2025.109591

Chiao-Chu Shen, Cheng-Liang Huang

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引用次数: 0

Abstract

Sol-gel-derived Nd₂Zr₂O₇ (NZO)-based metal/insulator/metal (MIM) structures were investigated for Resistive Random-Access Memory (RRAM) applications. All devices exhibited forming-free bipolar resistive switching (RS) behavior, with the switching properties primarily governed by oxygen vacancy concentrations, which can be optimized through the thermal treatment. The self-formed thin AlO_x interface layer between the Al and NZO film prevents the out-diffusion of oxygen ions and acts as an oxygen storage layer, enhancing the RS properties of the devices. A 300°C-annealed single-layered sample can operate for up to 1348 cycles with a high R_on/R_off ratio of ∼10³ under an operation set/reset voltage of −2.47/0.55 V. It also demonstrates a retention time exceeding 10⁴ s at both room temperature and 85 °C, indicating significant potential for RRAM applications. However, post-metal annealing degrades the RS properties of the sample due to the formation of a thicker AlO_x interface layer.

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热处理对溶胶-凝胶Nd2Zr2O7薄膜在金属/绝缘体/金属结构中无形成电阻开关行为的影响

研究了溶胶凝胶衍生的Nd2Zr2O7 （NZO）基金属/绝缘体/金属（MIM）结构在电阻式随机存取存储器（RRAM）中的应用。所有器件均表现出无形成双极电阻开关（RS）行为，开关性能主要由氧空位浓度决定，可以通过热处理来优化。在Al和NZO膜之间自形成的薄AlOx界面层阻止了氧离子的向外扩散，起到了储氧层的作用，提高了器件的RS性能。300°c退火的单层样品可以在−2.47/0.55 V的操作设置/复位电压下工作多达1348个循环，Ron/Roff比高达~ 103。它还显示在室温和85℃下保持时间超过104 s，表明RRAM应用的巨大潜力。然而，由于形成较厚的AlOx界面层，金属后退火降低了样品的RS性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.