Ab-initio study of the influence of pressure on the electronic, optical and thermodynamic properties of SrGd2O4 spinel

IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
F.Z. Rachid , A. Bouhmouche , R. Moubah , B. Rabi , Z. Yamkane , A. Hasnaoui , H. Lassri
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引用次数: 0

Abstract

This study uses DFT calculations to investigate the effects of pressure on the electronic, optical, and thermodynamic properties of SrGd2O4. The pressure reduces the band gap energy of SrGd2O4 from 4.41 eV at 0Pa to 2.23 eV at 35 GPa, highlighting significant changes in its optoelectronic properties. Moreover, as pressure increases to 35 GPa, significant changes are observed in the imaginary part of the dielectric tensor, which doubles from 1.02 to 3.92 at 4.3 eV, indicating enhanced light absorption. The optical conductivity rises from 680 to 2800 (Ω cm)−1, and the absorption coefficient increases from 12 to 42 × 104/cm. The complex refractive index also varies from 2 to 2.6. Reflectivity improves from 0.12 to 0.21 at 4.2 eV. These findings illustrate the potential for fine-tuning the optical properties of the material through pressure, offering valuable insights for applications in photonics and optoelectronics. Thermodynamically, as pressure is applied, the crystal lattice of the material is compressed, which alter the vibrational modes of the atoms. This compression often leads to an increase in the vibrational frequencies of the phonons, leading the specific heat capacity peak to shift to higher temperatures (from 120 K at 0Pa to 170 K at 36 GPa).
压力对SrGd2O4尖晶石电子、光学和热力学性质影响的Ab-initio研究
本研究使用DFT计算来研究压力对SrGd2O4的电子、光学和热力学性质的影响。压力使SrGd2O4的带隙能量从0Pa时的4.41 eV降低到35 GPa时的2.23 eV,其光电性能发生了显著变化。此外,当压力增加到35 GPa时,介电张量的虚部发生了显著变化,在4.3 eV时从1.02增加到3.92,表明光吸收增强。光导率从680增加到2800 (Ω cm)−1,吸收系数从12增加到42 × 104/cm。复折射率也在2 ~ 2.6之间变化。在4.2 eV下,反射率从0.12提高到0.21。这些发现说明了通过压力微调材料光学特性的潜力,为光子学和光电子学的应用提供了有价值的见解。从热力学上讲,当施加压力时,材料的晶格被压缩,这改变了原子的振动模式。这种压缩通常会导致声子振动频率的增加,导致比热容峰值转移到更高的温度(从0Pa时的120 K到36 GPa时的170 K)。
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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