F.Z. Rachid , A. Bouhmouche , R. Moubah , B. Rabi , Z. Yamkane , A. Hasnaoui , H. Lassri
{"title":"Ab-initio study of the influence of pressure on the electronic, optical and thermodynamic properties of SrGd2O4 spinel","authors":"F.Z. Rachid , A. Bouhmouche , R. Moubah , B. Rabi , Z. Yamkane , A. Hasnaoui , H. Lassri","doi":"10.1016/j.mssp.2025.109585","DOIUrl":null,"url":null,"abstract":"<div><div>This study uses DFT calculations to investigate the effects of pressure on the electronic, optical, and thermodynamic properties of SrGd<sub>2</sub>O<sub>4</sub>. The pressure reduces the band gap energy of SrGd<sub>2</sub>O<sub>4</sub> from 4.41 eV at 0Pa to 2.23 eV at 35 GPa, highlighting significant changes in its optoelectronic properties. Moreover, as pressure increases to 35 GPa, significant changes are observed in the imaginary part of the dielectric tensor, which doubles from 1.02 to 3.92 at 4.3 eV, indicating enhanced light absorption. The optical conductivity rises from 680 to 2800 (Ω cm)<sup>−1</sup>, and the absorption coefficient increases from 12 to 42 × 10<sup>4</sup>/cm. The complex refractive index also varies from 2 to 2.6. Reflectivity improves from 0.12 to 0.21 at 4.2 eV. These findings illustrate the potential for fine-tuning the optical properties of the material through pressure, offering valuable insights for applications in photonics and optoelectronics. Thermodynamically, as pressure is applied, the crystal lattice of the material is compressed, which alter the vibrational modes of the atoms. This compression often leads to an increase in the vibrational frequencies of the phonons, leading the specific heat capacity peak to shift to higher temperatures (from 120 K at 0Pa to 170 K at 36 GPa).</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"194 ","pages":"Article 109585"},"PeriodicalIF":4.2000,"publicationDate":"2025-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800125003221","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
This study uses DFT calculations to investigate the effects of pressure on the electronic, optical, and thermodynamic properties of SrGd2O4. The pressure reduces the band gap energy of SrGd2O4 from 4.41 eV at 0Pa to 2.23 eV at 35 GPa, highlighting significant changes in its optoelectronic properties. Moreover, as pressure increases to 35 GPa, significant changes are observed in the imaginary part of the dielectric tensor, which doubles from 1.02 to 3.92 at 4.3 eV, indicating enhanced light absorption. The optical conductivity rises from 680 to 2800 (Ω cm)−1, and the absorption coefficient increases from 12 to 42 × 104/cm. The complex refractive index also varies from 2 to 2.6. Reflectivity improves from 0.12 to 0.21 at 4.2 eV. These findings illustrate the potential for fine-tuning the optical properties of the material through pressure, offering valuable insights for applications in photonics and optoelectronics. Thermodynamically, as pressure is applied, the crystal lattice of the material is compressed, which alter the vibrational modes of the atoms. This compression often leads to an increase in the vibrational frequencies of the phonons, leading the specific heat capacity peak to shift to higher temperatures (from 120 K at 0Pa to 170 K at 36 GPa).
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications.
Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.