Design of β‐Ga2O3 Enhancement‐Mode Metal‐Oxide‐Semiconductor Heterojunction Field‐Effect Transistor Using Counter‐Doped β‐Ga2O3 Channel

IF 5.3 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Advanced Electronic Materials Pub Date : 2025-04-17 DOI:10.1002/aelm.202400854

Taeeun Lee, Yusup Jung, Jun Young Park, Sujin Kim, Sinsu Kyoung, Sola Woo

{"title":"Design of β‐Ga2O3 Enhancement‐Mode Metal‐Oxide‐Semiconductor Heterojunction Field‐Effect Transistor Using Counter‐Doped β‐Ga2O3 Channel","authors":"Taeeun Lee, Yusup Jung, Jun Young Park, Sujin Kim, Sinsu Kyoung, Sola Woo","doi":"10.1002/aelm.202400854","DOIUrl":null,"url":null,"abstract":"In this paper, a β‐Ga2O3 enhancement‐mode metal‐oxide‐semiconductor heterojunction field‐effect transistor (MOS‐HJFET) is demonstrated using a counter‐doped β‐Ga2O3 channel, achieved by the diffusion of p‐type nickel oxide (p‐NiO). The junction between the diffused p‐NiO layer and the β‐Ga2O3 channel forms a depletion region, effectively blocking the channel in the normally‐off transistor. The fabricated β‐Ga2O3 MOS‐HJFET with a counter‐doped β‐Ga2O3 channel achieves a specific on‐resistance (Ron,sp) of 32.6 mΩ·cm2, threshold voltage (Vth) of 1.3 V, supporting a drain current of over 1 mA in the discrete device, and a high on/off current ratio of 108. Furthermore, guidelines for designing the enhancement‐mode MOS‐HJFET are proposed, considering the diffused length of p‐NiO and the thickness of the β‐Ga2O3 epitaxial layer.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"263 1","pages":""},"PeriodicalIF":5.3000,"publicationDate":"2025-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1002/aelm.202400854","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}

引用次数: 0

Abstract

In this paper, a β‐Ga2O3 enhancement‐mode metal‐oxide‐semiconductor heterojunction field‐effect transistor (MOS‐HJFET) is demonstrated using a counter‐doped β‐Ga2O3 channel, achieved by the diffusion of p‐type nickel oxide (p‐NiO). The junction between the diffused p‐NiO layer and the β‐Ga2O3 channel forms a depletion region, effectively blocking the channel in the normally‐off transistor. The fabricated β‐Ga2O3 MOS‐HJFET with a counter‐doped β‐Ga2O3 channel achieves a specific on‐resistance (Ron,sp) of 32.6 mΩ·cm2, threshold voltage (Vth) of 1.3 V, supporting a drain current of over 1 mA in the discrete device, and a high on/off current ratio of 108. Furthermore, guidelines for designing the enhancement‐mode MOS‐HJFET are proposed, considering the diffused length of p‐NiO and the thickness of the β‐Ga2O3 epitaxial layer.

Abstract Image

查看原文本刊更多论文

利用反掺杂β - Ga2O3通道设计β - Ga2O3增强模式金属-氧化物-半导体异质结场效应晶体管

在本文中，利用反掺杂的β - Ga2O3通道，通过p型氧化镍（p - NiO）的扩散，证明了β - Ga2O3增强模式金属氧化物半导体异质结场效应晶体管（MOS - HJFET）。扩散的p - NiO层和β - Ga2O3沟道之间的结形成耗尽区，有效地阻塞了正常关闭晶体管中的沟道。制备的β - Ga2O3 MOS - HJFET具有反掺杂β - Ga2O3通道，其特异导通电阻（Ron,sp）为32.6 mΩ·cm2，阈值电压（Vth）为1.3 V，在分立器件中支持超过1 mA的漏极电流，以及108的高通/关电流比。此外，本文还提出了考虑p - NiO扩散长度和β - Ga2O3外延层厚度的增强模式MOS - HJFET的设计准则。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

11.00

自引率

3.20%

发文量

433

期刊介绍： Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.