Enhanced linearity of AlGaN/GaN HEMTs via dual-gate configuration for RF amplifier applications

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-04-14 DOI:10.1016/j.sse.2025.109127

Haowen Guo , Wenbo Ye , Junmin Zhou , Yitian Gu , Han Gao , Xinbo Zou

{"title":"Enhanced linearity of AlGaN/GaN HEMTs via dual-gate configuration for RF amplifier applications","authors":"Haowen Guo , Wenbo Ye , Junmin Zhou , Yitian Gu , Han Gao , Xinbo Zou","doi":"10.1016/j.sse.2025.109127","DOIUrl":null,"url":null,"abstract":"<div><div>This study investigates RF linearity performance of a GaN dual-gate HEMT, focusing on its two-tone intermodulation characteristics. The dual-gate configuration is implemented to enhance linearity performance by reducing feedback capacitance to 41.8 fF/mm, achieving a reduction of 73 % when compared to conventional single-gate HEMTs. The dual-gate device showcases a small-signal gain of 23.5 dB at 2.1 GHz, which remains constant regardless of DC gate bias voltage VB. Intermodulation distortion could be mitigated by increasing VB, as evidenced by device’s highest OIP3 of 30.1 dBm at VB of 3 V and a drain voltage of 20 V. Additionally, the OIP3/PDC reaches a peak value of 10.6 dB at VDS of 5 V. A comparison between the dual-gate HEMT and a conventional single-gate device demonstrates a 3.7 dB gain increase of and a linearity improvement of 5.9 dB. These results highlight the advantageous power gain and high linearity of the dual-gate structure, indicating its considerable potential for RF amplifier applications that require minimum signal distortion.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"227 ","pages":"Article 109127"},"PeriodicalIF":1.4000,"publicationDate":"2025-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid-state Electronics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0038110125000723","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

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Abstract

This study investigates RF linearity performance of a GaN dual-gate HEMT, focusing on its two-tone intermodulation characteristics. The dual-gate configuration is implemented to enhance linearity performance by reducing feedback capacitance to 41.8 fF/mm, achieving a reduction of 73 % when compared to conventional single-gate HEMTs. The dual-gate device showcases a small-signal gain of 23.5 dB at 2.1 GHz, which remains constant regardless of DC gate bias voltage V_B. Intermodulation distortion could be mitigated by increasing V_B, as evidenced by device’s highest OIP3 of 30.1 dBm at V_B of 3 V and a drain voltage of 20 V. Additionally, the OIP3/P_DC reaches a peak value of 10.6 dB at V_DS of 5 V. A comparison between the dual-gate HEMT and a conventional single-gate device demonstrates a 3.7 dB gain increase of and a linearity improvement of 5.9 dB. These results highlight the advantageous power gain and high linearity of the dual-gate structure, indicating its considerable potential for RF amplifier applications that require minimum signal distortion.

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.