Bi2O2Se/Ta2NiSe5 Tunneling Heterojunction for High-Performance, Polarization-Sensitive, and Broadband Infrared Photodetector

Abstract

New technologies such as autonomous driving, and machine vision keep pushing the photodetectors to acquire a comprehensive high performance including high responsivity, fast response, low detection limit, polarization sensitivity, and broadband photoresponse. 2D van der Waals (vdW) heterostructures have emerged as promising candidates for next-generation photodetectors due to their tailored band alignments and unique physical properties. In this work, a high-performance photodetector based on the Bi₂O₂Se/Ta₂NiSe₅ heterojunction, which simultaneously achieves high responsivity (>10³ A W⁻¹) and fast response time (≈5 µs) through the tunneling effect is proposed. The heterojunction device exhibits impressive sensitivity with a low detection limit, achieving ≈2 pW at 633 nm and ≈4 nW at 1550 nm. The specific detectivity can reach 3.75 × 10¹³ Jones at 633 nm and 1.8 × 10¹⁰ Jones at 1550 nm. Furthermore, high-resolution broadband and polarized light imaging are successfully demonstrated. These findings provide more opportunities for developing next-generation photodetectors with comprehensive high performance.