On-Chip Single-/Dual-Notch-Band Half-Mode Substrate Integrated Plasmonic Waveguide Filters Based on Through Glass Via Technology

Abstract

In this letter, a series of on-chip millimeter-wave (mm-W) notch-band half-mode substrate integrated plasmonic waveguide (HMSIPW) filters based on wafer-level through glass via (TGV) technology are realized, which features wideband and ultralow loss. Based on the analysis of the dispersion characteristics of the HMSIPW unit, the design mechanism of the single-band HMSIPW filter is studied. Furthermore, this work proposes the first integration of complementary split-ring resonator (CSRR)-based defected ground structure (DGS) with HMSIPW through TGV technology, enabling compact and tunable notch-band filtering in the mm-W regime. The unique combination of glass substrate and spoof surface plasmon polaritons (SSPPs) achieves ultralow insertion loss and independent control of center frequencies and bandwidths (BWs), surpassing prior works in both miniaturization and functional flexibility. To validate the proposed design methodology, three glass-based HMSIPW filter prototypes are fabricated and tested. The results show a good filtering performance. The number of notch band can be changed by adjusting the parameters of CSRR. The center frequencies and BWs can also be independently controlled. The proposed HMSIPW filters with good performance may have potential applications in mm-W wireless communication systems.