A High-Voltage Low-Dropout Regulator With Wide Ranges of Output Capacitance and Au80Sn20 Alloy Solder for Packaging

IF 2.3 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Components, Packaging and Manufacturing Technology Pub Date : 2025-02-26 DOI:10.1109/TCPMT.2025.3546032

Hua Fan;Xiaopeng Diao;Qi Wei;Quanyuan Feng

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引用次数: 0

Abstract

This article presents the circuit design and the implementation of a low-dropout (LDO) regulator with high-voltage operation across a broad temperature range from

$- 55~^{\circ } {\mathrm {C}}$

$125~^{\circ } {\mathrm {C}}$

. The proposed LDO operates stably over wide ranges of output capacitance

$C\rm _{OUT}$

(from 1 to

$100~\mu $

F) and effective series resistance (ESR; from tens of milliohms ceramic capacitor to several ohms aluminum electrolytic capacitor). This LDO consumes not more than 200-

$\mu $

A quiescent current. This low quiescent current is obtained by replacing the traditional high-voltage p-n-p bipolar power transistor with a p-type laterally diffused MOS (LDMOS) counterpart, reducing the quiescent current from tens of milliamperes to hundreds of microamperes. At the same time, the degradation of the transient response caused by the large gate capacitor of the p-type LDMOS power transistor is mitigated by an operational amplifier with a specially designed feedback path, class-AB bipolar driver, and dynamic bias. The measurement results show that when the load current jumps from 5 to 750 mA within

$3~\mu \text {s}$

, the output voltage overshoot remains as low as 50 mV with a

$1~\mu $

F of output capacitance

$C\rm _{OUT}$

查看原文本刊更多论文

一种具有宽范围输出电容和 Au80Sn20 合金焊料的高压低压差稳压器，适用于封装

本文介绍了一种低压差（LDO）稳压器的电路设计和实现方法，该稳压器可在从 $- 55~^{\circ }$ 到 $125~^{\circ }$ 的宽温度范围内实现高电压工作。{\mathrm {C}}$ 至 $125~^{\circ }。{\mathrm {C}}$ 。建议的 LDO 可在输出电容 $C\rm _{OUT}$ （从 1 到 $100~\mu $ F）和有效串联电阻（ESR；从几十毫欧的陶瓷电容器到几欧的铝电解电容器）的宽范围内稳定运行。该 LDO 消耗的静态电流不超过 200- $\mu $A。这种低静态电流是通过用 p 型横向扩散 MOS（LDMOS）替代传统的高压 p-n-p 双极功率晶体管获得的，从而将静态电流从几十毫安降低到几百微安。与此同时，p 型 LDMOS 功率晶体管的大型栅极电容导致的瞬态响应劣化问题也通过具有专门设计的反馈路径、AB 类双极驱动器和动态偏置的运算放大器得到了缓解。测量结果表明，当负载电流在 3~\mu \text {s}$ 内从 5 mA 跳至 750 mA 时，输出电压过冲保持在 50 mV 以下，输出电容为 $C\rm _{OUT}$ $1~\mu$F。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Components, Packaging and Manufacturing Technology ENGINEERING, MANUFACTURING-ENGINEERING, ELECTRICAL & ELECTRONIC

CiteScore

4.70

自引率

13.60%

发文量

203

审稿时长

3 months

期刊介绍： IEEE Transactions on Components, Packaging, and Manufacturing Technology publishes research and application articles on modeling, design, building blocks, technical infrastructure, and analysis underpinning electronic, photonic and MEMS packaging, in addition to new developments in passive components, electrical contacts and connectors, thermal management, and device reliability; as well as the manufacture of electronics parts and assemblies, with broad coverage of design, factory modeling, assembly methods, quality, product robustness, and design-for-environment.