{"title":"A Bandpass Power Combined Amplifier Based on All-Ports Reflectionless Filtering Power Divider","authors":"Guo-Qing Zhou;Jin Xu;Jia-Hao Su;Zi-Hao Zhou;Hui-Kun Yang;Shi-Xin Meng","doi":"10.1109/TCPMT.2025.3545059","DOIUrl":null,"url":null,"abstract":"This article proposed a bandpass power combined amplifier (BPCA) based on an all-ports reflectionless filtering power divider (ARFPD). The ARFPD integrates the functions of filtering, power division/combination, and stopband signal absorption. In addition, to verify the proposed BPCA, a low-voltage 3–4GHz continuous Class-F power amplifier (PA) using a gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) was designed. The proposed BPCA has the characteristics of good filtering, harmonic suppression, and out-of-band absorption. To validate the proposed structure, the ARFPD, continuous Class-F PA, and BPCA in the 3–4GHz frequency range were fabricated and tested. The test results show that the ARFPD has an insertion loss of 3.8 dB, an input return loss of better than 11.6 dB across all frequency band (0–7 GHz),and an isolation and output return loss (ORL) of better than 18 dB within the band. The BPCA has achieved input and ORL better than 10 dB up to 8GHz, a maximum DE of 55.7%, a maximum <inline-formula> <tex-math>${P} _{\\text {out}}$ </tex-math></inline-formula> of 28.2 dBm, as well as a harmonic suppression level of 33dBc up to the tenth-harmonic frequency.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 4","pages":"792-799"},"PeriodicalIF":2.3000,"publicationDate":"2025-02-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Components, Packaging and Manufacturing Technology","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10902431/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
This article proposed a bandpass power combined amplifier (BPCA) based on an all-ports reflectionless filtering power divider (ARFPD). The ARFPD integrates the functions of filtering, power division/combination, and stopband signal absorption. In addition, to verify the proposed BPCA, a low-voltage 3–4GHz continuous Class-F power amplifier (PA) using a gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) was designed. The proposed BPCA has the characteristics of good filtering, harmonic suppression, and out-of-band absorption. To validate the proposed structure, the ARFPD, continuous Class-F PA, and BPCA in the 3–4GHz frequency range were fabricated and tested. The test results show that the ARFPD has an insertion loss of 3.8 dB, an input return loss of better than 11.6 dB across all frequency band (0–7 GHz),and an isolation and output return loss (ORL) of better than 18 dB within the band. The BPCA has achieved input and ORL better than 10 dB up to 8GHz, a maximum DE of 55.7%, a maximum ${P} _{\text {out}}$ of 28.2 dBm, as well as a harmonic suppression level of 33dBc up to the tenth-harmonic frequency.
期刊介绍:
IEEE Transactions on Components, Packaging, and Manufacturing Technology publishes research and application articles on modeling, design, building blocks, technical infrastructure, and analysis underpinning electronic, photonic and MEMS packaging, in addition to new developments in passive components, electrical contacts and connectors, thermal management, and device reliability; as well as the manufacture of electronics parts and assemblies, with broad coverage of design, factory modeling, assembly methods, quality, product robustness, and design-for-environment.