Antenna-Integrated and PA-Embedded Glass Substrates for D-Band InP Power Amplifier Modules

IF 2.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Xiaofan Jia;Xingchen Li;Joon Woo Kim;Kyoung-Sik Moon;Mark J. W. Rodwell;Madhavan Swaminathan
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引用次数: 0

Abstract

This article presents an innovative antenna-in-package (AiP) solution designed for 140-GHz indium phosphide (InP) power amplifier (PA) front-end modules. In this design, InP PAs are strategically embedded at the center of a glass substrate (AGC EN-A1) sandwiched by low-loss dielectric layers (ABF-GL102) on both sides. This arrangement facilitates ultrashort die-to-package interconnects through 20- $\mu $ m dielectric vias, achieving a remarkably low simulated loss of 0.2–0.3 dB at 140 GHz and an impressive $S11$ / $S22$ of less than −15 dB across a wide frequency range from 110 to 170 GHz. We conducted a thorough evaluation of various PA designs with two-stage and three-stage amplifying circuits embedded within this package. The findings reveal that the embedded InP PAs deliver consistent small signal gains of 11.1 dB for the two-stage and 15.8 dB for the three-stage PAs at 140 GHz, comparable with their bare die performance and other existing packaging technologies. A key feature of this design is the integration of a 5- $\mu $ m-thick copper heat spreader on the PA backside, which significantly enhances thermal management. In addition, the design accommodates the seamless integration of a $1\times 8$ microstrip patch antenna array. Directly connected to the PA output, this array achieves maximum broadside gains of 12.9, 25.3, and 29.7 dB for the standalone antenna, and the PA-antenna modules with two-stage and three-stage PAs at 139 GHz, respectively, over a 3-dB bandwidth of 5 GHz (136–141 GHz). Moreover, the radiation pattern of the PA-antenna module has been meticulously characterized, showcasing a $13^{\circ } ~3$ -dB E-plane beamwidth and $64^{\circ } ~3$ -dB H-plane beamwidth from the broadside. With its superior electrical and thermal performance, scalability, and cost-effectiveness, this package presents a promising solution for developing D-band beamforming arrays in next-generation communication systems.
用于d波段InP功率放大器模块的天线集成和pa嵌入式玻璃基板
本文提出了一种用于140 ghz磷化铟(InP)功率放大器(PA)前端模块的创新型封装天线(AiP)解决方案。在本设计中,InP PAs被战略性地嵌入玻璃基板(AGC EN-A1)的中心,并被两侧的低损耗介电层(ABF-GL102)夹在中间。这种安排有助于通过20- $ $ μ $ $ m介电过孔实现超短封装互连,在140 GHz时实现0.2-0.3 dB的非常低的模拟损耗,并且在110至170 GHz的宽频率范围内实现令人印象深刻的$S11$ / $S22$小于- 15 dB。我们对该封装中嵌入两级和三级放大电路的各种PA设计进行了全面评估。研究结果表明,嵌入式InP PAs在140 GHz时提供了一致的小信号增益,两级为11.1 dB,三级为15.8 dB,与裸片性能和其他现有封装技术相当。本设计的一个关键特点是在PA背面集成了一个5- $\mu $ m厚的铜散热器,大大增强了热管理。此外,该设计还可无缝集成1\ × 8$微带贴片天线阵列。该阵列直接连接到PA输出,在3db带宽为5ghz (136-141 GHz)的情况下,独立天线和具有两级和三级PA的PA天线模块的最大宽侧增益分别为12.9、25.3和29.7 dB。此外,对pa天线模块的辐射方向图进行了细致的表征,显示了从侧面看的$13^{\circ} ~3$ -dB的e面波束宽度和$64^{\circ} ~3$ -dB的h面波束宽度。凭借其卓越的电气和热性能、可扩展性和成本效益,该封装为下一代通信系统中开发d波段波束成形阵列提供了一个有前途的解决方案。
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来源期刊
IEEE Transactions on Components, Packaging and Manufacturing Technology
IEEE Transactions on Components, Packaging and Manufacturing Technology ENGINEERING, MANUFACTURING-ENGINEERING, ELECTRICAL & ELECTRONIC
CiteScore
4.70
自引率
13.60%
发文量
203
审稿时长
3 months
期刊介绍: IEEE Transactions on Components, Packaging, and Manufacturing Technology publishes research and application articles on modeling, design, building blocks, technical infrastructure, and analysis underpinning electronic, photonic and MEMS packaging, in addition to new developments in passive components, electrical contacts and connectors, thermal management, and device reliability; as well as the manufacture of electronics parts and assemblies, with broad coverage of design, factory modeling, assembly methods, quality, product robustness, and design-for-environment.
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