Antenna-Integrated and PA-Embedded Glass Substrates for D-Band InP Power Amplifier Modules

IF 2.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Xiaofan Jia;Xingchen Li;Joon Woo Kim;Kyoung-Sik Moon;Mark J. W. Rodwell;Madhavan Swaminathan
{"title":"Antenna-Integrated and PA-Embedded Glass Substrates for D-Band InP Power Amplifier Modules","authors":"Xiaofan Jia;Xingchen Li;Joon Woo Kim;Kyoung-Sik Moon;Mark J. W. Rodwell;Madhavan Swaminathan","doi":"10.1109/TCPMT.2025.3549371","DOIUrl":null,"url":null,"abstract":"This article presents an innovative antenna-in-package (AiP) solution designed for 140-GHz indium phosphide (InP) power amplifier (PA) front-end modules. In this design, InP PAs are strategically embedded at the center of a glass substrate (AGC EN-A1) sandwiched by low-loss dielectric layers (ABF-GL102) on both sides. This arrangement facilitates ultrashort die-to-package interconnects through 20-<inline-formula> <tex-math>$\\mu $ </tex-math></inline-formula>m dielectric vias, achieving a remarkably low simulated loss of 0.2–0.3 dB at 140 GHz and an impressive <inline-formula> <tex-math>$S11$ </tex-math></inline-formula>/<inline-formula> <tex-math>$S22$ </tex-math></inline-formula> of less than −15 dB across a wide frequency range from 110 to 170 GHz. We conducted a thorough evaluation of various PA designs with two-stage and three-stage amplifying circuits embedded within this package. The findings reveal that the embedded InP PAs deliver consistent small signal gains of 11.1 dB for the two-stage and 15.8 dB for the three-stage PAs at 140 GHz, comparable with their bare die performance and other existing packaging technologies. A key feature of this design is the integration of a 5-<inline-formula> <tex-math>$\\mu $ </tex-math></inline-formula>m-thick copper heat spreader on the PA backside, which significantly enhances thermal management. In addition, the design accommodates the seamless integration of a <inline-formula> <tex-math>$1\\times 8$ </tex-math></inline-formula> microstrip patch antenna array. Directly connected to the PA output, this array achieves maximum broadside gains of 12.9, 25.3, and 29.7 dB for the standalone antenna, and the PA-antenna modules with two-stage and three-stage PAs at 139 GHz, respectively, over a 3-dB bandwidth of 5 GHz (136–141 GHz). Moreover, the radiation pattern of the PA-antenna module has been meticulously characterized, showcasing a <inline-formula> <tex-math>$13^{\\circ } ~3$ </tex-math></inline-formula>-dB <italic>E</i>-plane beamwidth and <inline-formula> <tex-math>$64^{\\circ } ~3$ </tex-math></inline-formula>-dB <italic>H</i>-plane beamwidth from the broadside. With its superior electrical and thermal performance, scalability, and cost-effectiveness, this package presents a promising solution for developing D-band beamforming arrays in next-generation communication systems.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 4","pages":"782-791"},"PeriodicalIF":2.3000,"publicationDate":"2025-03-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Components, Packaging and Manufacturing Technology","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10918667/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

This article presents an innovative antenna-in-package (AiP) solution designed for 140-GHz indium phosphide (InP) power amplifier (PA) front-end modules. In this design, InP PAs are strategically embedded at the center of a glass substrate (AGC EN-A1) sandwiched by low-loss dielectric layers (ABF-GL102) on both sides. This arrangement facilitates ultrashort die-to-package interconnects through 20- $\mu $ m dielectric vias, achieving a remarkably low simulated loss of 0.2–0.3 dB at 140 GHz and an impressive $S11$ / $S22$ of less than −15 dB across a wide frequency range from 110 to 170 GHz. We conducted a thorough evaluation of various PA designs with two-stage and three-stage amplifying circuits embedded within this package. The findings reveal that the embedded InP PAs deliver consistent small signal gains of 11.1 dB for the two-stage and 15.8 dB for the three-stage PAs at 140 GHz, comparable with their bare die performance and other existing packaging technologies. A key feature of this design is the integration of a 5- $\mu $ m-thick copper heat spreader on the PA backside, which significantly enhances thermal management. In addition, the design accommodates the seamless integration of a $1\times 8$ microstrip patch antenna array. Directly connected to the PA output, this array achieves maximum broadside gains of 12.9, 25.3, and 29.7 dB for the standalone antenna, and the PA-antenna modules with two-stage and three-stage PAs at 139 GHz, respectively, over a 3-dB bandwidth of 5 GHz (136–141 GHz). Moreover, the radiation pattern of the PA-antenna module has been meticulously characterized, showcasing a $13^{\circ } ~3$ -dB E-plane beamwidth and $64^{\circ } ~3$ -dB H-plane beamwidth from the broadside. With its superior electrical and thermal performance, scalability, and cost-effectiveness, this package presents a promising solution for developing D-band beamforming arrays in next-generation communication systems.
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来源期刊
IEEE Transactions on Components, Packaging and Manufacturing Technology
IEEE Transactions on Components, Packaging and Manufacturing Technology ENGINEERING, MANUFACTURING-ENGINEERING, ELECTRICAL & ELECTRONIC
CiteScore
4.70
自引率
13.60%
发文量
203
审稿时长
3 months
期刊介绍: IEEE Transactions on Components, Packaging, and Manufacturing Technology publishes research and application articles on modeling, design, building blocks, technical infrastructure, and analysis underpinning electronic, photonic and MEMS packaging, in addition to new developments in passive components, electrical contacts and connectors, thermal management, and device reliability; as well as the manufacture of electronics parts and assemblies, with broad coverage of design, factory modeling, assembly methods, quality, product robustness, and design-for-environment.
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