TLM-based numerical extraction for CMOS-compatible N+-InGaAs ohmic contacts on 200mm Si substrates

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-04-01 DOI:10.1016/j.sse.2025.109112

A. Lombrez , A. Divay , H. Boutry , L. Colas , N. Coudurier , S. Altazin , T. Baron

引用次数: 0

Abstract

We report the results of a TLM-based numerical extraction methodology applied on CMOS-compatible N⁺-InGaAs ohmic contacts integrated with dielectrics on 200mm Si substrates. The methodology is first described and calibrated using contacts on SOI. Then, we applied this method on W/TiN/Ti on N⁺-InGaAs contacts to obtain state-of-the-art level ρ_c = 7,5.10^-8 Ω.cm² for 0.35x0.35µm contact dimension, which is close to relevant contact size of the targeted application (THz HBT for 6G).

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基于tlm的200mm Si衬底上cmos兼容N+-InGaAs欧姆触点的数值提取

我们报告了一种基于tlm的数值提取方法的结果，该方法应用于cmos兼容的N+-InGaAs欧姆触点与200mm Si衬底上的介电体集成。首先描述了该方法，并使用SOI上的触点进行了校准。然后，我们将该方法应用于W/TiN/Ti on N+-InGaAs触点上，得到了最先进水平的ρc = 7,5.10-8 Ω。接触尺寸为0.35x0.35µm，接近目标应用的相关接触尺寸（6G太赫兹HBT）。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.