Shuai Zhou , Kaixue Ma , Yugong Wu , Shoufu Liu , Chi Ma
{"title":"Ultimate thermal stress reliability evaluation of 3D packaged memory","authors":"Shuai Zhou , Kaixue Ma , Yugong Wu , Shoufu Liu , Chi Ma","doi":"10.1016/j.microrel.2025.115702","DOIUrl":null,"url":null,"abstract":"<div><div>This study evaluates the thermal stress reliability of 3D packaged memory under extreme temperature environments (−65 °C to 175 °C). Combining finite element simulation and experimental validation, we demonstrate that thermal shock induces higher stress (12–14 % increase) and shorter lifespan (25 % reduction) compared to temperature cycling. The Darveaux model accurately predicted failure cycles with <10 % error, supported by SEM analysis of creep and crack propagation mechanisms. These findings provide critical insights for designing robust 3D packages in aerospace and AI systems.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"169 ","pages":"Article 115702"},"PeriodicalIF":1.6000,"publicationDate":"2025-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Reliability","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0026271425001155","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
This study evaluates the thermal stress reliability of 3D packaged memory under extreme temperature environments (−65 °C to 175 °C). Combining finite element simulation and experimental validation, we demonstrate that thermal shock induces higher stress (12–14 % increase) and shorter lifespan (25 % reduction) compared to temperature cycling. The Darveaux model accurately predicted failure cycles with <10 % error, supported by SEM analysis of creep and crack propagation mechanisms. These findings provide critical insights for designing robust 3D packages in aerospace and AI systems.
期刊介绍:
Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged.
Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.