Improved ac square wave-based mitigation technique for III-V/Si Bi-facial tandem solar cells under stress caused by light and elevated temperature induced degradation

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-04-07 DOI:10.1016/j.mssp.2025.109540

Jaljalalul Abedin Jony , Polgampola Chamani Madara , Hasnain Yousuf , Mengmeng Chu , Alamgeer , Rafi Ur Rahman , Junhan Bae , Seokjin Jang , Maha Nur Aida , Simpy Sanyal , Kapil Dev Sarker , Sangheon Park , Muhammad Quddamah Khokhar , Junsin Yi

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引用次数: 0

Abstract

This study explores Light and Elevated Temperature-Induced Degradation (LeTID) and tandem degradation in III-V/Si tandem solar cells under low-intensity illumination (0.1, 0.3, 0.5 suns) and high-temperature (85°C) conditions, emphasizing the role of ac recovery techniques. We analyzed a two-terminal III-V/Si tandem configuration, where low-intensity exposure resulted in significant degradation on bottom c-Si solar cells, reducing the current density (J_sc) by up to 8 %–5 % after 660 min. A 100 kHz square ac waveform was applied to counter this degradation, which improved activation energy from 0.43 eV during degradation to 0.60 eV after treatment. The regeneration process enhanced carrier passivation, improving J_sc, Open circuit voltage (V_oc), and Fill Factor (FF) with efficiency (Eff), recovering up to 97 % within 120 min. Initially, activation energy was 0.83 eV, which decreased to 0.43 eV during degradation and partially recovered with ac treatment. This work highlights the effectiveness of ac recovery in mitigating degradation and enhancing the performance of III-V/Si tandem solar cells.

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基于交流方波的III-V/Si双面串联太阳能电池在光和高温引起的退化应力下的改进缓解技术

本研究探讨了III-V/Si串联太阳能电池在低强度光照（0.1,0.3,0.5太阳）和高温（85°C）条件下的光和高温诱导降解（LeTID）和串联降解，强调了交流回收技术的作用。我们分析了两端III-V/Si串联配置，其中低强度暴露导致底部c-Si太阳能电池的显着降解，在660分钟后将电流密度（Jsc）降低高达8% - 5%。应用100 kHz方形交流波形来对抗这种降解，将活化能从降解期间的0.43 eV提高到处理后的0.60 eV。再生过程增强了载体钝化，提高了Jsc、开路电压（Voc）和填充因子（FF）和效率（Eff），在120分钟内回收高达97%。最初，活化能为0.83 eV，在降解过程中降至0.43 eV，通过交流处理部分恢复。这项工作强调了交流回收在减轻降解和提高III-V/Si串联太阳能电池性能方面的有效性。

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.