Maximum, effective, and average thermal resistance for GaN-based HEMTs on SiC, Si and sapphire substrates

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-04-03 DOI:10.1016/j.sse.2025.109121

Kaushik Shivanand Powar , Venkata Komalesh Tadepalli , Vaidehi Vijay Painter , Raphael Sommet , Anjan Chakravorty , P. Vigneshwara Raja

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Abstract

The maximum, effective, and average thermal resistance (R_TH) of AlGaN/GaN and InAlN/GaN high-electron mobility transistors (HEMTs) on silicon carbide (SiC), silicon (Si), and sapphire substrates are reported using TCAD simulation. After validating simulated I-V properties, R_TH is deduced from self-heating (SH)-induced rise in channel temperature (ΔT) versus dissipated power (P_D) plot. The maximum thermal resistance (R_THmax) determines HEMT reliability at higher power dissipation; so, peak channel temperature (T_max) is extracted. The simulated ΔT_max-P_D plots are compared with the literature results for each HEMT structure. The estimated R_THmax is consistent with the reported experimental values, verifying the TCAD model and confirming the validity of reported R_TH values. The effective thermal resistance (R_THeff) is needed to simulate the electrical properties using the compact model. For this purpose, isothermal I_DS-V_DS simulations are carried out at different temperatures without SH effects. Then, the cross-over temperature points (ΔT_eff) are identified by evaluating the isothermal data with the actual output properties at a particular P_D. The average thermal resistance (R_THavg) of the HEMT is computed by averaging the lattice temperature profile along the channel (mean channel temperature), and R_THavg is compared with R_THeff.

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通过 TCAD 仿真，报告了碳化硅 (SiC)、硅 (Si) 和蓝宝石衬底上的 AlGaN/GaN 和 InAlN/GaN 高电子迁移率晶体管 (HEMT) 的最大、有效和平均热阻 (RTH)。在验证了模拟的 I-V 特性后，从自热 (SH) 引起的沟道温度上升 (ΔT)与耗散功率 (PD) 的关系图中推导出 RTH。最大热阻 (RTHmax) 决定了 HEMT 在更高功率耗散时的可靠性；因此，要提取峰值沟道温度 (Tmax)。模拟的 ΔTmax-PD 图与每种 HEMT 结构的文献结果进行了比较。估计的 RTHmax 与报告的实验值一致，验证了 TCAD 模型，并确认了报告的 RTH 值的有效性。使用紧凑模型模拟电特性需要有效热阻 (RTHeff)。为此，在无 SH 影响的不同温度下进行了等温 IDS-VDS 模拟。然后，通过评估特定 PD 下的等温数据和实际输出特性，确定交叉温度点 (ΔTeff)。HEMT 的平均热阻 (RTHavg) 是通过平均沿沟道的晶格温度曲线（平均沟道温度）计算得出的，并将 RTHavg 与 RTHeff 进行比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.