Shuhan Wang , Zheng Zhou , Zili Tang , Jinghan Xu , Xiaoyan Liu , Xing Zhang
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引用次数: 0
Abstract
Efficient and accurate variation modeling serves as a critical part in circuit evaluation, which can reproduce actual electrical behavior of semiconductor devices. Conventional variation modeling usually consists of two steps: compact modeling the basic electrical properties and sub-modeling the variation sources introduced in MOSFET manufacturing process, mostly structural and doping parameters. This lengthy process results in a gap between device production and rapid circuit analysis. In order to improve modeling efficiency, in this work, we propose a one-step variation-included compact modeling approach leveraging machine learning. Utilizing conditional variational autoencoder (cVAE), currents with variation are directly constructed without the sub-modeling step, as variation sources of the cVAE model are automatically extracted. Benchmark against prior distribution of dataset generated by Monte Carlo simulation of BSIM-CMG, normalized variation in figure of merits (FoMs) of cVAE generated I-V curves are all above 0.9. After implementing the model in SPICE, high accuracy in circuit-level variation modeling also indicates the potential of the proposed model.
期刊介绍:
It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.