Solution-Shearing of Highly Smooth Ion-Gel Thin Films: Facilitating the Deposition of Organic Semiconductors for Ion-Gated Organic Field Effect Transistors

IF 5.3 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Advanced Electronic Materials Pub Date : 2025-04-03 DOI:10.1002/aelm.202400312

Jonathan Perez Andrade, Angelika Wrzesińska-Lashkova, Anupam Prasoon, Felix Talnack, Katherina Haase, Bernd Büchner, Xinliang Feng, Yana Vaynzof, Mike Hambsch, Yulia Krupskaya, Stefan C. B. Mannsfeld

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Abstract

A straightforward method is developed to produce ion-gels (IGs) with surface roughness at the nanometer level using a solution-shearing process, enabling the first successful growth of crystalline, small-molecule organic semiconductor (OSC) films directly on the IG layer. The effectiveness of this approach is demonstrated by fabricating top-contact electrolyte-gated organic field-effect transistors (EGOFETs) using thermal vapor deposition and solution-shearing. The gel matrix consists of polymethyl methacrylate (PMMA) or its blend with poly(vinylidene fluoride-co-hexafluoropropylene) (PVDF:HFP), and 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide ([EMI][TFSI]) serves as ionic liquid. X-ray photoemission spectroscopy (XPS) reveals that the shearing speed controls the polymer phase separation in the blended gels, producing capacitance values of up to 10.1 µF cm⁻². The exceptional smoothness of the gel films permits vacuum deposition polycrystalline films of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophen (C8-BTBT), dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophen (DNTT), and 2,9-didecyldinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (C10-DNTT), and solution-shearing of C8-BTBT and 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) on their surfaces. Grazing incidence wide-angle X-ray scattering (GIWAXS) can now be conducted directly on the OSC films without obstruction by the gel. EGOFETs with minimal hysteresis and mobilities up to 1.46 cm² V⁻¹ s⁻¹ are obtained for C10-DNTT. This study underscores the possibility of producing transistor-grade polycrystalline organic semiconductor films on top of IGs, making them attractive for surface characterization techniques and in situ measurements.

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高光滑离子凝胶薄膜的溶液剪切：促进离子门控有机场效应晶体管中有机半导体的沉积

本文开发了一种直接的方法，利用溶液剪切工艺生产具有纳米级表面粗糙度的离子凝胶（IGs），从而首次成功地在离子凝胶层上生长出晶体小分子有机半导体（OSC）薄膜。利用热气相沉积和溶液剪切技术制备了顶接触电解门控有机场效应晶体管（egofet），证明了该方法的有效性。凝胶基质由聚甲基丙烯酸甲酯（PMMA）或其与聚偏氟乙烯-共六氟丙烯（PVDF:HFP）的混合物组成，1-乙基-3-甲基咪唑双（三氟甲基磺酰基）亚胺（[EMI][TFSI]）作为离子液体。x射线光发射光谱（XPS）表明，剪切速度控制了混合凝胶中的聚合物相分离，产生的电容值高达10.1µF cm−2。凝胶膜的特殊平滑性允许真空沉积2,7-二辛基[1]苯并噻吩[3,2-b][1]苯并噻吩（C8-BTBT），二萘[2,3-b:2 ',3 ' -f]噻吩[3,2-b]噻吩（DNTT）和2,9-二癸基二萘[2,3-b:2 ',3 ' -f]噻吩[3,2-b]噻吩（C10-DNTT）的多晶膜，并在其表面剪切C8-BTBT和6,13-二（三异丙基硅乙基）五苯（tip -pentacene）。掠入射广角x射线散射（GIWAXS）现在可以直接在OSC薄膜上进行，而不会受到凝胶的阻碍。在C10-DNTT中获得了最小迟滞和高达1.46 cm2 V−1 s−1的迁移率的egofet。这项研究强调了在IGs上生产晶体管级多晶有机半导体薄膜的可能性，使其对表面表征技术和原位测量具有吸引力。

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来源期刊

Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

11.00

自引率

3.20%

发文量

433

期刊介绍： Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.