Thermoelectric properties of asymmetric low-dimensional Pt2ClF from ab initio calculation

IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
N. Boudghene Stambouli , M. Ould-Mohamed , T. Ouahrani
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Abstract

Finding thermoelectric materials with high figures of merit is a significant and ongoing research topic. A testbed of intriguing structures is made up of the candidate materials with low dimensional structures. In this study, we investigate the thermoelectric properties of low-dimensional Pt2Cl2 and Pt2ClF structures using first-principles calculations based on Density Functional Theory (DFT). Anharmonic effects, phonon transport properties, and lattice thermal conductivity were thoroughly analyzed. The results indicate that the asymmetric Pt2ClF structure exhibits significantly stronger anharmonicity compared to its symmetric counterpart, Pt2Cl2. This enhanced anharmonicity arises from the asymmetry introduced by fluorine substitution, which increases phonon–phonon scattering and reduces the lattice’s thermal conductivity. This makes the figure of merit higher for Pt2ClF. These findings suggest that the asymmetric Pt2ClF structure, with its enhanced phonon scattering mechanisms and suppressed lattice thermal conductivity, is a promising material for high-temperature thermoelectric applications.

Abstract Image

非对称低维Pt2ClF的热电性质从头计算
寻找具有高性能的热电材料是一个重要而持续的研究课题。候选材料具有低维结构,组成了一个有趣的结构试验台。在本研究中,我们使用基于密度泛函理论(DFT)的第一性原理计算研究了低维Pt2Cl2和Pt2ClF结构的热电性质。深入分析了非调和效应、声子输运性质和晶格导热性。结果表明,不对称Pt2ClF结构比对称Pt2Cl2具有更强的非调和性。这种增强的非调和性是由氟取代引起的不对称引起的,它增加了声子-声子散射并降低了晶格的导热性。这使得Pt2ClF的性能值更高。这些发现表明,具有增强声子散射机制和抑制晶格热导率的不对称Pt2ClF结构是一种很有前途的高温热电材料。
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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