Zn-doped FeOCl nanosheets enable accelerated tetracycline degradation via simulated sunlight-responsive photo-Fenton catalysis

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-04-03 DOI:10.1016/j.mssp.2025.109542

Chenggong Lu , Chujie Jiao , Zhiqiang Wei

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Abstract

This study synthesized a novel Zn-doped FeOCl (Zn-FeOCl) photocatalyst using a one-step calcination method and utilized it for the photo-Fenton degradation of tetracycline (TC) under simulated sunlight. The structure, optical properties, and photocatalytic performance of Zn-FeOCl were systematically characterized and compared with those of undoped FeOCl. Among the variants, Zn-FeOCl-8 exhibited the highest catalytic efficiency, achieving a TC removal rate of 98.3 % within 60 min, with a degradation rate constant 6.4 times greater than that of pure FeOCl. Free radical trapping experiments and EPR results indicate that hydroxyl radicals (·OH) are the primary reactive species in the photo-Fenton process. Furthermore, density functional theory (DFT) calculations indicated that zinc doping reduced the band gap and improved charge transfer, significantly enhancing the photocatalytic activity of the catalyst. This study provides new insights into the modification of FeOCl and offers a possible approach for the efficient removal of antibiotic contaminants from water.

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锌掺杂FeOCl纳米片通过模拟阳光响应光- fenton催化加速四环素降解

本研究采用一步煅烧法合成了一种新型的掺锌FeOCl （Zn-FeOCl）光催化剂，并将其用于模拟阳光下四环素（TC）的光fenton降解。系统表征了Zn-FeOCl的结构、光学性质和光催化性能，并与未掺杂FeOCl进行了比较。其中，Zn-FeOCl-8表现出最高的催化效率，在60 min内达到98.3%的TC去除率，降解率是纯FeOCl的6.4倍。自由基捕获实验和EPR结果表明，羟基自由基（·OH）是光- fenton过程中的主要反应物质。此外，密度泛函理论（DFT）计算表明，锌掺杂减少了带隙，改善了电荷转移，显著提高了催化剂的光催化活性。本研究为FeOCl的改性提供了新的见解，并为有效去除水中抗生素污染物提供了可能的途径。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.