A Bi-Directional Near-Ground Current Sensor With Reconfigurable Unidirectional Gains

IF 2.2 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE

IEEE Solid-State Circuits Letters Pub Date : 2025-03-10 DOI:10.1109/LSSC.2025.3549495

Yun Hao;Bo Zhou;Xukun Wang;Chunli Huang;Zhihua Wang

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引用次数: 0

Abstract

A bi-directional near-ground-output low-side-input current-sensing amplifier (CSA) is fabricated in 65-nm CMOS. Two negative-feedback paths drive dual pMOS transistors to conduct an auto-switching bi-directional current detection with configurable unidirectional gains, which reduces the conventional switching-point distortions and doubles the sensing accuracy. A DC shifter based on a negative-feedback loop, avoids an input large current to benefit the sensing linearity, and optimizes the common-mode rejection ratio (CMRR). Various noise and offset suppression mechanisms are also utilized. Experimental results show that the proposed CSA achieves an offset voltage of

$1.58~\mu $

V, a noise level of 37.5 nV/

$\surd $

Hz, and a CMRR up to 159 dB, with the power dissipation of 0.36 mW from a 1-V supply and an active area of 0.19 mm2. Reconfigurable or different unidirectional gains and near-ground input / output voltages are achieved, which are different from the existing designs.

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具有可重构单向增益的双向近地电流传感器

采用65纳米CMOS工艺制备了一种双向近地输出低侧输入电流传感放大器。两个负反馈路径驱动双pMOS晶体管进行自动开关双向电流检测，具有可配置的单向增益，减少了传统的开关点畸变，使传感精度提高了一倍。基于负反馈回路的直流移相器避免了输入大电流，有利于传感线性度，并优化了共模抑制比（CMRR）。还利用了各种噪声和偏置抑制机制。实验结果表明，该CSA的失调电压为$1.58~ $ μ $ V，噪声水平为37.5 nV/ $ $ surd $ Hz， CMRR高达159 dB， 1 V电源的功耗为0.36 mW，有源面积为0.19 mm2。实现了不同于现有设计的可重构或不同的单向增益和近地输入/输出电压。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Solid-State Circuits Letters Engineering-Electrical and Electronic Engineering

CiteScore

4.30

自引率

3.70%

发文量