Influence of semiconductor thickness for the contact resistance measurement with transfer length method at the interface between bismuth telluride thermoelectric materials and metals

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films Pub Date : 2025-03-29 DOI:10.1016/j.tsf.2025.140668

Akihiro Katsura , Maki Tsurumoto , Aiji Suetake , Yukiko Hirose , Daniele Micucci , Stefania Specchia , Tohru Sugahara

{"title":"Influence of semiconductor thickness for the contact resistance measurement with transfer length method at the interface between bismuth telluride thermoelectric materials and metals","authors":"Akihiro Katsura , Maki Tsurumoto , Aiji Suetake , Yukiko Hirose , Daniele Micucci , Stefania Specchia , Tohru Sugahara","doi":"10.1016/j.tsf.2025.140668","DOIUrl":null,"url":null,"abstract":"<div><div>The precise measurement and minimization of contact resistance (Rc) between the thermoelectric semiconductor and electrode are required for enhancing the conversion efficiency and reliability of thermoelectric generation (TEG) devices. The Rc values are obtained using the conventional transfer length method (TLM); however, the effect of semiconductor thickness on contact resistance remains unexplored. To gain a clearer understanding of this effect, this study fabricated samples with different semiconductor thicknesses and evaluated the specific contact resistivity (ρc) at the bismuth telluride (Bi2Te3)/barrier metals (Ti, Cr, and Ni) interfaces, regardless of the semiconductor dimension and device shape. Our TLM measurements revealed that the ρc of the Bi2Te3/barrier metals interfaces increased in the order of Ti, Cr, Ni. This study provides accurate data regarding the physical interface properties between Bi2Te3/barrier metals, enhancing the conversion performance and reliability of TEG devices.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"819 ","pages":"Article 140668"},"PeriodicalIF":2.0000,"publicationDate":"2025-03-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Thin Solid Films","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0040609025000690","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, COATINGS & FILMS","Score":null,"Total":0}

引用次数: 0

Abstract

The precise measurement and minimization of contact resistance (R_c) between the thermoelectric semiconductor and electrode are required for enhancing the conversion efficiency and reliability of thermoelectric generation (TEG) devices. The R_c values are obtained using the conventional transfer length method (TLM); however, the effect of semiconductor thickness on contact resistance remains unexplored. To gain a clearer understanding of this effect, this study fabricated samples with different semiconductor thicknesses and evaluated the specific contact resistivity (ρ_c) at the bismuth telluride (Bi₂Te₃)/barrier metals (Ti, Cr, and Ni) interfaces, regardless of the semiconductor dimension and device shape. Our TLM measurements revealed that the ρ_c of the Bi₂Te₃/barrier metals interfaces increased in the order of Ti, Cr, Ni. This study provides accurate data regarding the physical interface properties between Bi₂Te₃/barrier metals, enhancing the conversion performance and reliability of TEG devices.

查看原文本刊更多论文

要提高热发电设备（TEG）的转换效率和可靠性，就必须精确测量并尽量减小热电半导体与电极之间的接触电阻（Rc）。Rc 值是通过传统的传输长度法 (TLM) 获得的；但是，半导体厚度对接触电阻的影响仍未得到探讨。为了更清楚地了解这种影响，本研究制作了具有不同半导体厚度的样品，并评估了碲化铋（Bi2Te3）/势垒金属（钛、铬和镍）界面上的特定接触电阻率（ρc），而不考虑半导体尺寸和器件形状。我们的 TLM 测量结果表明，Bi2Te3/载体金属界面的 ρc 按 Ti、Cr、Ni 的顺序增加。这项研究提供了有关 Bi2Te3/载流金属界面物理特性的准确数据，从而提高了 TEG 器件的转换性能和可靠性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Thin Solid Films 工程技术-材料科学：膜

CiteScore

4.00

自引率

4.80%

发文量

381

审稿时长

7.5 months

期刊介绍： Thin Solid Films is an international journal which serves scientists and engineers working in the fields of thin-film synthesis, characterization, and applications. The field of thin films, which can be defined as the confluence of materials science, surface science, and applied physics, has become an identifiable unified discipline of scientific endeavor.