Synthesis and photosensitized hydrogen production of WO3-WS2 composite

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-04-01 DOI:10.1016/j.mssp.2025.109526

Miaomiao Xue, Mingcai Yin, Dehang Ma, Jiaming Zhang, Luyao Ling, Yaoting Fan

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引用次数: 0

Abstract

WO₃ is one of the most potential photocatalysts. However, to realize its photocatalytic hydrogen production, modification such as combining with WS₂ is necessary due to its poor reduction capacity. To find out the optimal ratio between WO₃ and WS₂, in this paper, a facile two-step calcination method was used for the preparation of a series of WO₃-WS₂ composites, and their photocatalytic hydrogen performances were investigated under Erythrosine B sodium salt (EB) sensitization. The results showed that when the mass ratio of WS₂ to WO₃ is 5:5 or higher, efficient hydrogen evolution comes true. In addition, the calcination condition for the preparation of precursor WO₃ and the method for the preparation of WO₃-WS₂ composite were optimized. The as-prepared WO₃-WS₂ exhibits relatively good stability and relatively stable hydrogen generation was achieved when CdS was introduced.

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.