Preparation and application of two-dimensional gallium nitride - A short review

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-03-31 DOI:10.1016/j.mssp.2025.109512

Hongbin Zhai , Ben Cao , Changtong Wu , Jiahui Wang , Shufang Ma , Bingshe Xu , Guoqiang Li

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引用次数: 0

Abstract

Gallium Nitride (GaN), as a representative of wide bandgap semiconductors, has become a focus of semiconductor research in recent years due to its excellent electronic and optoelectronic properties. Meanwhile, two-dimensional GaN, with its distinctive layered structure and tunable bandgap, has garnered significant attention in domains such as power electronics, optoelectronics, energy conversion and flexible wearable devices. Over the last few years, substantial research has been conducted on the fabrication of two-dimensional GaN materials and their device applications. Despite the broad prospects for the preparation and application of 2D GaN, it continues to face several challenges. This review highlights methods for the preparation of two-dimensional gallium nitride materials and device applications for power electronics, optoelectronics, as well as communications, detectors, and sensors. It summarizes different synthetic routes based on nitridation reactions, graphene-assisted heteroepitaxial growth, etc., and exemplifies the current status of device application research based on 2D GaN materials. Additionally, it anticipates the challenges encountered by current research and the emerging trends in future development, with the aim of facilitating the practical implementation process of 2D GaN.

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氮化镓（GaN）作为宽带隙半导体的代表，以其优异的电子和光电特性成为近年来半导体研究的焦点。同时，二维氮化镓具有独特的层状结构和可调带隙，在电力电子、光电子、能量转换和柔性可穿戴设备等领域备受关注。在过去几年中，人们对二维氮化镓材料的制备及其器件应用进行了大量研究。尽管二维氮化镓的制备和应用前景广阔，但它仍然面临着一些挑战。本综述重点介绍了二维氮化镓材料的制备方法以及在电力电子学、光电子学、通信、探测器和传感器中的器件应用。它总结了基于氮化反应、石墨烯辅助异外延生长等的不同合成路线，并举例说明了基于二维氮化镓材料的器件应用研究现状。此外，它还预测了当前研究遇到的挑战和未来发展的新趋势，旨在促进二维氮化镓的实际应用进程。

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.