{"title":"HfO₂–ZrO₂ Superlattice HZO Ultrathin Poly-Si Channel (3.5 nm) Junctionless FeTFTs Exhibiting Superior Endurance and Robust Retention","authors":"Dong-Ru Hsieh;Zi-Yang Hong;Huai-En Luo;Wei-Ju Yeh;Jia-Chian Ni;Ciao-Fen Chen;Yen-Fu Lin;Shun-Tsung Lo;Tien-Sheng Chao","doi":"10.1109/TED.2025.3544188","DOIUrl":null,"url":null,"abstract":"In this study, HfO2–ZrO2 superlattice (SL) HfZrO2 (HZO) 3.5-nm ultrathin poly-Si channel (UTPC) junctionless (JL) ferroelectric thin-film transistors (FeTFTs) with the two types of HfO2/ZrO2 nanolamination (NL) thicknesses (0.5 and 1.0 nm) and a 1.0-nm ZrO2 seed layer were experimentally investigated and discussed their ferroelectricity and reliability for the first time. Compared with the conventional HZO UTPC JL FeTFTs, the SL HZO UTPC JL FeTFTs with a HfO2 and ZrO2 NL thickness of 1 nm achieved a relatively large pristine/residual pulsed memory window (MW) up to 1.09/1.06 V under a very low pulse height <inline-formula> <tex-math>$\\times $ </tex-math></inline-formula> pulse width down to <inline-formula> <tex-math>$0.8~\\mu $ </tex-math></inline-formula> Vs and nearly zero MW degradation rate (<inline-formula> <tex-math>$\\Delta $ </tex-math></inline-formula> MW/MW<inline-formula> <tex-math>$_{,\\text {pristine}}$ </tex-math></inline-formula>) down to 2.8% after the endurance test up to <inline-formula> <tex-math>$10^{{7}}$ </tex-math></inline-formula> cycles. Furthermore, the SL HZO UTPC JL FeTFTs with an NL thickness of 1 nm exhibited a robust 10/298/423 K retention characteristic for 25 h with a sufficiently large pulsed MW of 1.30/1.38/0.65 V, and the synaptic behavior with a maximum channel conductance over 1400 nS. According to pulsed characteristic and reliability viewpoints, the HfO2–ZrO2 SL HZO UTPC JL FeTFTs are greatly promising candidates for 3-D nand nonvolatile memories (NVMs) and neuromorphic systems.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 4","pages":"1756-1762"},"PeriodicalIF":2.9000,"publicationDate":"2025-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10908886/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
In this study, HfO2–ZrO2 superlattice (SL) HfZrO2 (HZO) 3.5-nm ultrathin poly-Si channel (UTPC) junctionless (JL) ferroelectric thin-film transistors (FeTFTs) with the two types of HfO2/ZrO2 nanolamination (NL) thicknesses (0.5 and 1.0 nm) and a 1.0-nm ZrO2 seed layer were experimentally investigated and discussed their ferroelectricity and reliability for the first time. Compared with the conventional HZO UTPC JL FeTFTs, the SL HZO UTPC JL FeTFTs with a HfO2 and ZrO2 NL thickness of 1 nm achieved a relatively large pristine/residual pulsed memory window (MW) up to 1.09/1.06 V under a very low pulse height $\times $ pulse width down to $0.8~\mu $ Vs and nearly zero MW degradation rate ($\Delta $ MW/MW$_{,\text {pristine}}$ ) down to 2.8% after the endurance test up to $10^{{7}}$ cycles. Furthermore, the SL HZO UTPC JL FeTFTs with an NL thickness of 1 nm exhibited a robust 10/298/423 K retention characteristic for 25 h with a sufficiently large pulsed MW of 1.30/1.38/0.65 V, and the synaptic behavior with a maximum channel conductance over 1400 nS. According to pulsed characteristic and reliability viewpoints, the HfO2–ZrO2 SL HZO UTPC JL FeTFTs are greatly promising candidates for 3-D nand nonvolatile memories (NVMs) and neuromorphic systems.
本研究对HfO2 - ZrO2超晶格(SL) HfZrO2 (HZO) 3.5 nm超薄多晶硅通道(UTPC)无结(JL)铁电薄膜晶体管(FeTFTs)进行了实验研究,并首次讨论了两种HfO2/ZrO2纳米层厚度(0.5和1.0 nm)和1.0 nm ZrO2种子层的铁电性和可靠性。与传统的HZO UTPC JL场效应管相比,HfO2和ZrO2 NL厚度为1 nm的SL HZO UTPC JL场效应管在极低的脉冲高度$\times $脉冲宽度降至$0.8~\mu $ Vs下获得了相对较大的原始/残余脉冲记忆窗口(MW),达到1.09/1.06 V,几乎为零的MW降解率($\Delta $ MW/MW $_{,\text {pristine}}$)降至2.8% after the endurance test up to $10^{{7}}$ cycles. Furthermore, the SL HZO UTPC JL FeTFTs with an NL thickness of 1 nm exhibited a robust 10/298/423 K retention characteristic for 25 h with a sufficiently large pulsed MW of 1.30/1.38/0.65 V, and the synaptic behavior with a maximum channel conductance over 1400 nS. According to pulsed characteristic and reliability viewpoints, the HfO2–ZrO2 SL HZO UTPC JL FeTFTs are greatly promising candidates for 3-D nand nonvolatile memories (NVMs) and neuromorphic systems.
期刊介绍:
IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.