HfO₂–ZrO₂ Superlattice HZO Ultrathin Poly-Si Channel (3.5 nm) Junctionless FeTFTs Exhibiting Superior Endurance and Robust Retention

IF 2.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Dong-Ru Hsieh;Zi-Yang Hong;Huai-En Luo;Wei-Ju Yeh;Jia-Chian Ni;Ciao-Fen Chen;Yen-Fu Lin;Shun-Tsung Lo;Tien-Sheng Chao
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引用次数: 0

Abstract

In this study, HfO2–ZrO2 superlattice (SL) HfZrO2 (HZO) 3.5-nm ultrathin poly-Si channel (UTPC) junctionless (JL) ferroelectric thin-film transistors (FeTFTs) with the two types of HfO2/ZrO2 nanolamination (NL) thicknesses (0.5 and 1.0 nm) and a 1.0-nm ZrO2 seed layer were experimentally investigated and discussed their ferroelectricity and reliability for the first time. Compared with the conventional HZO UTPC JL FeTFTs, the SL HZO UTPC JL FeTFTs with a HfO2 and ZrO2 NL thickness of 1 nm achieved a relatively large pristine/residual pulsed memory window (MW) up to 1.09/1.06 V under a very low pulse height $\times $ pulse width down to $0.8~\mu $ Vs and nearly zero MW degradation rate ( $\Delta $ MW/MW $_{,\text {pristine}}$ ) down to 2.8% after the endurance test up to $10^{{7}}$ cycles. Furthermore, the SL HZO UTPC JL FeTFTs with an NL thickness of 1 nm exhibited a robust 10/298/423 K retention characteristic for 25 h with a sufficiently large pulsed MW of 1.30/1.38/0.65 V, and the synaptic behavior with a maximum channel conductance over 1400 nS. According to pulsed characteristic and reliability viewpoints, the HfO2–ZrO2 SL HZO UTPC JL FeTFTs are greatly promising candidates for 3-D nand nonvolatile memories (NVMs) and neuromorphic systems.
HfO₂-ZrO₂ 超晶格 HZO 超薄聚硅氧烷通道(3.5 nm)无结 FeTFT 显示出卓越的耐久性和稳定的保持力
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来源期刊
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices 工程技术-工程:电子与电气
CiteScore
5.80
自引率
16.10%
发文量
937
审稿时长
3.8 months
期刊介绍: IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
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