Higher Order Thermal Impedance Extraction of GaN Power HEMTs by I–V Measurements

IF 2.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Richard Reiner;Akshay G. Nambiar;Stefan Mönch;Michael Basler;Daniel Grieshaber;Philipp Döring;Patrick Waltereit;Rüdiger Quay
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引用次数: 0

Abstract

This work presents a method for extracting higher order thermal models of GaN power high-electron mobility transistors (HEMTs) from I–V measurements using a typical commercial power analyzer. The approach involves deriving and fitting an electrothermal model function to measure data using a nonlinear least squares solver, yielding the thermal parameters for a higher order thermal model. Measurements are conducted using a parameter analyzer and a controlled thermal chuck, with a transient drain current response signal. The method is employed to derive the thermal impedance parameters of a 5th-order thermal Foster model for a GaN power transistor. The Foster model parameters are presented in both time and frequency domains and are subsequently transformed into Cauer model parameters. The results demonstrate strong agreement with data obtained from an on-chip temperature sensor, confirming the method’s validity. This new extraction method can be executed using standard laboratory equipment typically available for the electrical characterization of GaN power transistors.
通过 I-V 测量提取 GaN 功率 HEMT 的高阶热阻抗
本工作提出了一种利用典型的商用功率分析仪从I-V测量中提取GaN功率高电子迁移率晶体管(hemt)高阶热模型的方法。该方法包括推导和拟合电热模型函数,使用非线性最小二乘求解器来测量数据,从而产生高阶热模型的热参数。测量使用参数分析仪和可控热卡盘进行,具有瞬态漏极电流响应信号。利用该方法推导了氮化镓功率晶体管的五阶热福斯特模型的热阻抗参数。福斯特模型参数分别在时域和频域表示,然后转化为Cauer模型参数。结果与片上温度传感器得到的数据非常吻合,证实了该方法的有效性。这种新的提取方法可以使用标准的实验室设备执行,通常可用于GaN功率晶体管的电学表征。
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来源期刊
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices 工程技术-工程:电子与电气
CiteScore
5.80
自引率
16.10%
发文量
937
审稿时长
3.8 months
期刊介绍: IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
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