{"title":"Spurious-Free Shear Horizontal Surface Acoustic Wave Filters Based on 36Y-Cut LiNbO₃/SiO₂/Si Substrates","authors":"Yushuai Liu;Yiwei Wang;Xuankai Xu;Tao Wu","doi":"10.1109/TED.2025.3541598","DOIUrl":null,"url":null,"abstract":"High-performance surface acoustic wave (SAW) filters are essential for meeting modern demands for ubiquitous wireless connectivity and rapid data transmission. This study first explores the design and optimization of shear-horizontal-SAW (SH-SAW) multilayer resonators on 36Y-cut LiNbO3/SiO2/Si substrates, addressing spurious mode suppression, energy dispersion characteristics, and filter applications. To mitigate interference between the transverse and longitudinal modes, a new tilted interdigital transducer (IDT) design and the reflector period ratio <inline-formula> <tex-math>${\\lambda }_{R}$ </tex-math></inline-formula>/<inline-formula> <tex-math>${\\lambda }\\lt {1}$ </tex-math></inline-formula> were implemented. Dispersion analysis identified the optimal wavelength for mode suppression at <inline-formula> <tex-math>$1.8~\\mu $ </tex-math></inline-formula>m, addressing out-of-band (OoB) interference from Rayleigh and high-order SH (SH1) modes. Studies of phase velocity (<inline-formula> <tex-math>${v}_{p}$ </tex-math></inline-formula>) and energy distribution revealed that metal layers significantly affect acoustic energy dissipation, reducing <inline-formula> <tex-math>${v}_{p}$ </tex-math></inline-formula> and quality factor (Q) at higher frequencies than 2 GHz. These findings were finally applied to design a spurious-free filter with a center frequency near 2 GHz and a fractional bandwidth (FBW) of 9.9%, demonstrating its potential for high-performance acoustic filters in communication systems.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 4","pages":"1961-1968"},"PeriodicalIF":2.9000,"publicationDate":"2025-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10934071/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
High-performance surface acoustic wave (SAW) filters are essential for meeting modern demands for ubiquitous wireless connectivity and rapid data transmission. This study first explores the design and optimization of shear-horizontal-SAW (SH-SAW) multilayer resonators on 36Y-cut LiNbO3/SiO2/Si substrates, addressing spurious mode suppression, energy dispersion characteristics, and filter applications. To mitigate interference between the transverse and longitudinal modes, a new tilted interdigital transducer (IDT) design and the reflector period ratio ${\lambda }_{R}$ /${\lambda }\lt {1}$ were implemented. Dispersion analysis identified the optimal wavelength for mode suppression at $1.8~\mu $ m, addressing out-of-band (OoB) interference from Rayleigh and high-order SH (SH1) modes. Studies of phase velocity (${v}_{p}$ ) and energy distribution revealed that metal layers significantly affect acoustic energy dissipation, reducing ${v}_{p}$ and quality factor (Q) at higher frequencies than 2 GHz. These findings were finally applied to design a spurious-free filter with a center frequency near 2 GHz and a fractional bandwidth (FBW) of 9.9%, demonstrating its potential for high-performance acoustic filters in communication systems.
期刊介绍:
IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.