Xiaotong Mao;Yu Zhou;Xiaofeng Jia;Xi Zhang;Haoyan Liu;Shengkai Wang;Xiaolei Wang;Yongliang Li
{"title":"Impacts of Postdeposition Annealing on Interface Properties of HfO2/Si0.7Ge0.3 Gate Stacks With TMA Predoping","authors":"Xiaotong Mao;Yu Zhou;Xiaofeng Jia;Xi Zhang;Haoyan Liu;Shengkai Wang;Xiaolei Wang;Yongliang Li","doi":"10.1109/TED.2025.3543467","DOIUrl":null,"url":null,"abstract":"The impacts of postdeposition annealing (PDA) on the electrical characteristics and structural properties of HfO2/Si0.7Ge0.3 gate stacks using trimethylaluminum (TMA) predoping are investigated in detail. The interface state density (<inline-formula> <tex-math>${D} _{\\text {it}}$ </tex-math></inline-formula>) first decreases and then increases under the PDA from <inline-formula> <tex-math>$300~^{\\circ }$ </tex-math></inline-formula>C to <inline-formula> <tex-math>$600~^{\\circ }$ </tex-math></inline-formula>C. Compared with PDA of <inline-formula> <tex-math>$300~^{\\circ }$ </tex-math></inline-formula>C, the minimum <inline-formula> <tex-math>${D} _{\\text {it}}$ </tex-math></inline-formula> of <inline-formula> <tex-math>$8\\times 10^{{11}}$ </tex-math></inline-formula> eV<inline-formula> <tex-math>$^{-{1}} \\cdot $ </tex-math></inline-formula>cm<inline-formula> <tex-math>$^{-{2}}$ </tex-math></inline-formula> is achieved at PDA of <inline-formula> <tex-math>$400~^{\\circ }$ </tex-math></inline-formula>C because the formation of Ge-O bonds at the interface is more effectively suppressed. As the PDA temperature further increases to <inline-formula> <tex-math>$500~^{\\circ }$ </tex-math></inline-formula>C and <inline-formula> <tex-math>$600~^{\\circ }$ </tex-math></inline-formula>C, the diffusion of Al into HfO2 causes the formation of an increasing number of Al-O bonds, and the oxygen defects within the Al-O network facilitates the diffusion of additional oxygen to the interface, resulting in the formation of more GeO that contribute to the deterioration of <inline-formula> <tex-math>${D} _{\\text {it}}$ </tex-math></inline-formula>.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 4","pages":"1612-1616"},"PeriodicalIF":2.9000,"publicationDate":"2025-02-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10902510/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
The impacts of postdeposition annealing (PDA) on the electrical characteristics and structural properties of HfO2/Si0.7Ge0.3 gate stacks using trimethylaluminum (TMA) predoping are investigated in detail. The interface state density (${D} _{\text {it}}$ ) first decreases and then increases under the PDA from $300~^{\circ }$ C to $600~^{\circ }$ C. Compared with PDA of $300~^{\circ }$ C, the minimum ${D} _{\text {it}}$ of $8\times 10^{{11}}$ eV$^{-{1}} \cdot $ cm$^{-{2}}$ is achieved at PDA of $400~^{\circ }$ C because the formation of Ge-O bonds at the interface is more effectively suppressed. As the PDA temperature further increases to $500~^{\circ }$ C and $600~^{\circ }$ C, the diffusion of Al into HfO2 causes the formation of an increasing number of Al-O bonds, and the oxygen defects within the Al-O network facilitates the diffusion of additional oxygen to the interface, resulting in the formation of more GeO that contribute to the deterioration of ${D} _{\text {it}}$ .
期刊介绍:
IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.