Impacts of Postdeposition Annealing on Interface Properties of HfO2/Si0.7Ge0.3 Gate Stacks With TMA Predoping

IF 2.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Xiaotong Mao;Yu Zhou;Xiaofeng Jia;Xi Zhang;Haoyan Liu;Shengkai Wang;Xiaolei Wang;Yongliang Li
{"title":"Impacts of Postdeposition Annealing on Interface Properties of HfO2/Si0.7Ge0.3 Gate Stacks With TMA Predoping","authors":"Xiaotong Mao;Yu Zhou;Xiaofeng Jia;Xi Zhang;Haoyan Liu;Shengkai Wang;Xiaolei Wang;Yongliang Li","doi":"10.1109/TED.2025.3543467","DOIUrl":null,"url":null,"abstract":"The impacts of postdeposition annealing (PDA) on the electrical characteristics and structural properties of HfO2/Si0.7Ge0.3 gate stacks using trimethylaluminum (TMA) predoping are investigated in detail. The interface state density (<inline-formula> <tex-math>${D} _{\\text {it}}$ </tex-math></inline-formula>) first decreases and then increases under the PDA from <inline-formula> <tex-math>$300~^{\\circ }$ </tex-math></inline-formula>C to <inline-formula> <tex-math>$600~^{\\circ }$ </tex-math></inline-formula>C. Compared with PDA of <inline-formula> <tex-math>$300~^{\\circ }$ </tex-math></inline-formula>C, the minimum <inline-formula> <tex-math>${D} _{\\text {it}}$ </tex-math></inline-formula> of <inline-formula> <tex-math>$8\\times 10^{{11}}$ </tex-math></inline-formula> eV<inline-formula> <tex-math>$^{-{1}} \\cdot $ </tex-math></inline-formula>cm<inline-formula> <tex-math>$^{-{2}}$ </tex-math></inline-formula> is achieved at PDA of <inline-formula> <tex-math>$400~^{\\circ }$ </tex-math></inline-formula>C because the formation of Ge-O bonds at the interface is more effectively suppressed. As the PDA temperature further increases to <inline-formula> <tex-math>$500~^{\\circ }$ </tex-math></inline-formula>C and <inline-formula> <tex-math>$600~^{\\circ }$ </tex-math></inline-formula>C, the diffusion of Al into HfO2 causes the formation of an increasing number of Al-O bonds, and the oxygen defects within the Al-O network facilitates the diffusion of additional oxygen to the interface, resulting in the formation of more GeO that contribute to the deterioration of <inline-formula> <tex-math>${D} _{\\text {it}}$ </tex-math></inline-formula>.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 4","pages":"1612-1616"},"PeriodicalIF":2.9000,"publicationDate":"2025-02-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10902510/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

The impacts of postdeposition annealing (PDA) on the electrical characteristics and structural properties of HfO2/Si0.7Ge0.3 gate stacks using trimethylaluminum (TMA) predoping are investigated in detail. The interface state density ( ${D} _{\text {it}}$ ) first decreases and then increases under the PDA from $300~^{\circ }$ C to $600~^{\circ }$ C. Compared with PDA of $300~^{\circ }$ C, the minimum ${D} _{\text {it}}$ of $8\times 10^{{11}}$ eV $^{-{1}} \cdot $ cm $^{-{2}}$ is achieved at PDA of $400~^{\circ }$ C because the formation of Ge-O bonds at the interface is more effectively suppressed. As the PDA temperature further increases to $500~^{\circ }$ C and $600~^{\circ }$ C, the diffusion of Al into HfO2 causes the formation of an increasing number of Al-O bonds, and the oxygen defects within the Al-O network facilitates the diffusion of additional oxygen to the interface, resulting in the formation of more GeO that contribute to the deterioration of ${D} _{\text {it}}$ .
沉积后退火对掺杂 TMA 的 HfO2/Si0.7Ge0.3 栅极叠层界面特性的影响
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices 工程技术-工程:电子与电气
CiteScore
5.80
自引率
16.10%
发文量
937
审稿时长
3.8 months
期刊介绍: IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信